GAAS RF/Microwave Mixers 26

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum Conversion Loss Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

HMC553AG-SX

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

7

GAAS

25 dBm

COMPONENT

DIE OR CHIP

50 ohm

85 Cel

-40 Cel

10 dB

6000 MHz

14000 MHz

HMC557ALC4TR-R5

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

Tungsten/Nickel/Gold (W/Ni/Au)

HMC557ALC4TR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

Tungsten/Nickel/Gold (W/Ni/Au)

HMC557ALC4

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

Tungsten/Nickel/Gold (W/Ni/Au)

HMC787ALC3B

Analog Devices

TRIPLE BALANCED

GAAS

28 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

TUNGSTEN NICKEL GOLD

11 dB

3000 MHz

10000 MHz

HMC520ALC4

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 dB

e4

6000 MHz

10000 MHz

HMC524ALC3B

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

12

CERAMIC

GAAS

20 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

Tungsten/Nickel/Gold (W/Ni/Au)

13 dB

22000 MHz

32000 MHz

HMC553ALC3B

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

25 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

10 dB

6000 MHz

14000 MHz

HMC213BMS8GE

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

TSSOP8,.19

85 Cel

-40 Cel

10 dB

1500 MHz

4500 MHz

HMC260ALC3B

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

27 dBm

3 mA

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

12 dB

10000 MHz

26000 MHz

HMC525ALC4

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

TUNGSTEN NICKEL GOLD

11 dB

4000 MHz

8500 MHz

HMC7587-SX

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

40

GAAS

COMPONENT

DIE OR CHIP

50 ohm

85 Cel

-55 Cel

81000 MHz

86000 MHz

HMC7587

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

40

GAAS

COMPONENT

DIE OR CHIP

50 ohm

85 Cel

-55 Cel

81000 MHz

86000 MHz

HMC485AMS8GE

Analog Devices

SINGLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

27 dBm

COMPONENT

5

TSSOP8,.19

85 Cel

-40 Cel

11 dB

HIGH DYNAMIC RANGE

1700 MHz

2400 MHz

HMC520ALC4TR-R5

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 dB

e4

6000 MHz

10000 MHz

HMC520ALC4TR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 dB

e4

6000 MHz

10000 MHz

HMC260ALC3BTR-R5

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

27 dBm

3 mA

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

12 dB

10000 MHz

26000 MHz

HMC260ALC3BTR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

27 dBm

3 mA

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

12 dB

10000 MHz

26000 MHz

HMC524ALC3BTR-R5

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

12

CERAMIC

GAAS

20 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

13 dB

22000 MHz

32000 MHz

HMC524ALC3BTR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

12

CERAMIC

GAAS

20 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

13 dB

22000 MHz

32000 MHz

HMC553ALC3BTR-R5

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

25 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

10 dB

6000 MHz

14000 MHz

HMC553ALC3BTR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

25 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

10 dB

6000 MHz

14000 MHz

HMC525ALC4TR-R5

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

11 dB

4000 MHz

8500 MHz

HMC525ALC4TR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

11 dB

4000 MHz

8500 MHz

HMC553AG

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

7

GAAS

25 dBm

COMPONENT

DIE OR CHIP

50 ohm

85 Cel

-40 Cel

10 dB

6000 MHz

14000 MHz

HMC798LC4TR-R5

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

GAAS

13 dBm

125 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

GOLD OVER NICKEL

13 dB

e4

24000 MHz

34000 MHz

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.