Analog Devices RF/Microwave Switches 76

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Compression Point (1 dB)	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Minimum Isolation	Maximum Insertion Loss	Additional Features	Nominal On Time	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency	Port Termination
HMC241AQS16ETR	Analog Devices	DIVERSITY SWITCH						28.51 dBm				COMPONENT			50 ohm	85 Cel	-40 Cel	MATTE TIN		1.5 dB	CMOS COMPATIBLE, HIGH ISOLATION		e3	0 MHz	3500 MHz
ADRF5250BCPZ-R7	Analog Devices	DIVERSITY SWITCH						35 dBm				COMPONENT			50 ohm	105 Cel	-40 Cel	MATTE TIN			HIGH ISOLATION		e3	100 MHz	6000 MHz
ADRF5250BCPZRL	Analog Devices	DIVERSITY SWITCH						35 dBm				COMPONENT			50 ohm	105 Cel	-40 Cel	MATTE TIN			HIGH ISOLATION		e3	100 MHz	6000 MHz
ADRF5250BCPZ	Analog Devices	DIVERSITY SWITCH						35 dBm				COMPONENT			50 ohm	105 Cel	-40 Cel	MATTE TIN			HIGH ISOLATION		e3	100 MHz	6000 MHz
HMC344ALP3ETR	Analog Devices	SP4T						19.03 dBm				COMPONENT			50 ohm	85 Cel	-40 Cel			2.5 dB	HIGH ISOLATION			100 MHz	8000 MHz
ADRF5132BCPZN-R7	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	16	PLASTIC/EPOXY		1	43 dBm				COMPONENT	5	LCC16,.12SQ,20	50 ohm	105 Cel	-40 Cel					.55 us		700 MHz	5000 MHz	REFLECTIVE
ADRF5132BCPZN	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	16	PLASTIC/EPOXY		1	43 dBm				COMPONENT	5	LCC16,.12SQ,20	50 ohm	105 Cel	-40 Cel					.55 us		700 MHz	5000 MHz	REFLECTIVE
HMC641ATCPZ-EP-PT	Analog Devices	SP4T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	17 dBm		5 mA	22 dBm	COMPONENT	-3/-5	LCC24,.16SQ,20	50 ohm	125 Cel	-55 Cel		30 dB			.1 us		100 MHz	20000 MHz	ABSORPTIVE
HMC641ATCPZ-EP-RL7	Analog Devices	SP4T	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	17 dBm		5 mA	22 dBm	COMPONENT	-3/-5	LCC24,.16SQ,20	50 ohm	125 Cel	-55 Cel		30 dB			.1 us		100 MHz	20000 MHz	ABSORPTIVE
HMC344ATCPZ-EP-PT	Analog Devices	SP4T	SURFACE MOUNT	16		GAAS	1	19 dBm		6 mA	25 dBm	COMPONENT	-3/-5	LCC16,.12SQ,20	50 ohm	125 Cel	-55 Cel		28 dB	2.5 dB		.075 us		100 MHz	8000 MHz	ABSORPTIVE
HMC344ATCPZ-EP-R7	Analog Devices	SP4T	SURFACE MOUNT	16		GAAS	1	19 dBm		6 mA	25 dBm	COMPONENT	-3/-5	LCC16,.12SQ,20	50 ohm	125 Cel	-55 Cel		28 dB	2.5 dB		.075 us		100 MHz	8000 MHz	ABSORPTIVE
ADRF5024BCCZN	Analog Devices	DIVERSITY SWITCH						26.99 dBm				COMPONENT			50 ohm	105 Cel	-40 Cel	NICKEL PALLADIUM GOLD		1.7 dB	CMOS COMPATIBLE, HIGH ISOLATION		e4	100 MHz	44000 MHz
ADRF5025BCCZN	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	12	PLASTIC/EPOXY	CMOS	1	27.5 dBm			27.5 dBm	COMPONENT	+-3.3	LCC12,.1SQ,16	50 ohm	105 Cel	-40 Cel	NICKEL PALLADIUM GOLD				1.7 us	e4	.009 MHz	44000 MHz	REFLECTIVE
ADRF5160BCPZ	Analog Devices	DIVERSITY SWITCH						49.7 dBm				COMPONENT			50 ohm	105 Cel	-40 Cel			1 dB	CMOS COMPATIBLE			700 MHz	4000 MHz
HMC347B	Analog Devices	SPDT	SURFACE MOUNT	10		GAAS	1	17 dBm	1.38		24 dBm	COMPONENT	-5	DIE OR CHIP	50 ohm	85 Cel	-55 Cel		40 dB	2.2 dB	HIGH ISOLATION	.01 us		100 MHz	20000 MHz	ABSORPTIVE
HMC347ALP3ETR	Analog Devices	DIVERSITY SWITCH						26.99 dBm				COMPONENT			50 ohm	85 Cel	-55 Cel			2.5 dB	HIGH ISOLATION			0 MHz	14000 MHz
HMC241ATCPZ-EP-PT	Analog Devices	DIVERSITY SWITCH						17.48 dBm				COMPONENT			50 ohm	125 Cel	-55 Cel			1.5 dB	HIGH ISOLATION			100 MHz	4000 MHz
HMC241ATCPZ-EP-R7	Analog Devices	DIVERSITY SWITCH						17.48 dBm				COMPONENT			50 ohm	125 Cel	-55 Cel			1.5 dB	HIGH ISOLATION			100 MHz	4000 MHz
ADRF5026BCCZN	Analog Devices	SPDT	SURFACE MOUNT	20		CMOS	1	25 dBm	1.15		27 dBm	COMPONENT	+-3.3	LCC20,.12SQ,16	50 ohm	105 Cel	-40 Cel				HIGH ISOLATION	.014 us		100 MHz	44000 MHz	ABSORPTIVE
HMC641A-SX	Analog Devices	DIVERSITY SWITCH						16.99 dBm				COMPONENT			50 ohm	85 Cel	-55 Cel			3 dB	HIGH ISOLATION			100 MHz	18000 MHz
ADRF5046BCCZN	Analog Devices	DIVERSITY SWITCH						27.48 dBm				COMPONENT			50 ohm	105 Cel	-40 Cel	NICKEL PALLADIUM GOLD			CMOS COMPATIBLE, HIGH ISOLATION		e4	100 MHz	44000 MHz
ADRF5019BCPZN	Analog Devices	DIVERSITY SWITCH	SURFACE MOUNT	16	PLASTIC/EPOXY		1	23 dBm			28 dBm	COMPONENT	3.3	LCC16,.12SQ,20	50 ohm	105 Cel	-40 Cel					.285 us		100 MHz	13000 MHz
ADRF5047BCCZN-R7	Analog Devices	DIVERSITY SWITCH						26.53 dBm				COMPONENT			50 ohm	105 Cel	-40 Cel	NICKEL PALLADIUM GOLD					e4	.009 MHz	44000 MHz
ADRF5047BCCZN	Analog Devices	DIVERSITY SWITCH						26.53 dBm				COMPONENT			50 ohm	105 Cel	-40 Cel	NICKEL PALLADIUM GOLD					e4	.009 MHz	44000 MHz
HMC347B-SX	Analog Devices	SPDT	SURFACE MOUNT	10		GAAS	1	17 dBm	1.38		24 dBm	COMPONENT	-5	DIE OR CHIP	50 ohm	85 Cel	-55 Cel		40 dB	2.2 dB	HIGH ISOLATION	.01 us		100 MHz	20000 MHz	ABSORPTIVE
ADRF5042BCCZN	Analog Devices	SP4T	SURFACE MOUNT	24	PLASTIC/EPOXY		1	25 dBm	1.13		27 dBm	COMPONENT	+-3.3	LCC24,.12SQ,16	50 ohm	105 Cel	-40 Cel					.014 us		100 MHz	44000 MHz	ABSORPTIVE
ADRF5043BCCZN-R7	Analog Devices	SP4T	SURFACE MOUNT	24	PLASTIC/EPOXY		1	25 dBm	1.15		27 dBm	COMPONENT	+-3.3	LCC24,.12SQ,16	50 ohm	105 Cel	-40 Cel					2.8 us		.009 MHz	44000 MHz	ABSORPTIVE
ADRF5043BCCZN	Analog Devices	SP4T	SURFACE MOUNT	24	PLASTIC/EPOXY		1	25 dBm	1.15		27 dBm	COMPONENT	+-3.3	LCC24,.12SQ,16	50 ohm	105 Cel	-40 Cel					2.8 us		.009 MHz	44000 MHz	ABSORPTIVE

RF/Microwave Switches

RF/microwave switches are electronic components used to selectively route high-frequency signals between input and output ports. These switches are essential building blocks in radio communication systems, test and measurement equipment, and radar systems. RF/microwave switches are designed to operate in a specific frequency range, and their performance is characterized by parameters such as insertion loss, isolation, and switching speed.

There are different types of RF/microwave switches, including electromechanical switches, PIN diode switches, and solid-state switches. Electromechanical switches use mechanical contacts to switch between input and output ports, while PIN diode switches and solid-state switches use electronic control signals to route signals between different ports. PIN diode switches are suitable for lower power applications, while solid-state switches are capable of handling higher power levels.

RF/microwave switches can be classified based on their configuration and functionality. Single-pole single-throw (SPST) switches have a single input and a single output and can switch between two states, while single-pole double-throw (SPDT) switches have a single input and two outputs and can switch between two output ports. Multi-throw switches have more than two output ports and can switch between multiple states. Switches can also be classified as absorptive or reflective, depending on their ability to absorb or reflect the input signal when it is not being routed to the output port.