BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Insulated Gate Bipolar Transistors (IGBT) 68

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FS75R07N2E4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

320 ns

25

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

UL APPROVED

FS75R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

UL APPROVED

FP10R12W1T4B3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

500 ns

21

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP15R12W1T4B3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

28 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

495 ns

20

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

120 ns

UL APPROVED

FS150R17N3E4B11BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

835 W

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

1240 ns

35

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

280 ns

UL APPROVED

MG12150W-XN2MM

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

MG1225H-XN2MM

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

40 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X28

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

140 ns

MG1250H-XN2MM

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

75 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X28

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

140 ns

UL RECOGNIZED

MG1275H-XN2MM

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

105 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

28

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X28

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

UL RECOGNIZED

MG1275W-XN2MM

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

105 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

610 ns

35

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

FB10R06KL4BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

16 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

260 ns

17

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X17

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

60 ns

FS150R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

605 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

165 ns

FS200R07A1E3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

13

FLANGE MOUNT

175 Cel

SILICON

650 V

UPPER

R-XUFM-X13

1

ISOLATED

120 ns

FS200R12KT4RPBPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL RECOGNIZED

FS50R12KT4PB11BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

FS200R12PT4PBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

20

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

FS400R07A1E3S7BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1250 W

500 A

UNSPECIFIED

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

6

540 ns

25

FLANGE MOUNT

150 Cel

SILICON

705 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X25

1

ISOLATED

220 ns

FS100R12N2T4BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

FS400R07A1E3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1250 W

500 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

6

580 ns

23

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X23

1

ISOLATED

200 ns

FS75R12KT4B15BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

385 W

75 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

490 ns

28

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

6.4 V

UPPER

R-XUFM-X28

ISOLATED

185 ns

UL APPROVED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.