SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 17

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FF800R12KE3NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1200 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1140 ns

10

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X10

1

ISOLATED

Not Qualified

880 ns

FF600R12KE3NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

850 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1140 ns

10

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X10

1

ISOLATED

Not Qualified

880 ns

FF400R16KF4NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1600 ns

10

FLANGE MOUNT

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1000 ns

FF600R12KF4NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

600 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1150 ns

10

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

800 ns

FF600R17KE3NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

900 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1900 ns

10

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X10

1

ISOLATED

Not Qualified

900 ns

FF800R12KL4CNOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1250 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1210 ns

10

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

460 ns

FF800R17KE3NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1150 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1900 ns

10

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X10

1

ISOLATED

Not Qualified

900 ns

FF1200R12KE3NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1600 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1140 ns

10

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X10

1

ISOLATED

Not Qualified

880 ns

FF1200R17KE3NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1600 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

2100 ns

10

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X10

1

ISOLATED

Not Qualified

1050 ns

FF400R33KF2CNOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

4800 W

660 A

UNSPECIFIED

4.25 V

UNSPECIFIED

RECTANGULAR

2

1900 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

480 ns

FF1200R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1700 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

2100 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FD600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

950 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1900 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

1

ISOLATED

900 ns

FD800R33KF2CKNOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1300 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1900 ns

7

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

480 ns

FF1200R17KP4B2NOSA2

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1700 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

2380 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

1

ISOLATED

1060 ns

FF600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

950 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1900 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

1

ISOLATED

900 ns

FF600R17KF6CB2NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

975 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1220 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

ISOLATED

470 ns

FF800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1900 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

900 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.