| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
10 |
UNCASED CHIP |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUUC-N10 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.07 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
SILICON |
1200 V |
-40 Cel |
UPPER |
R-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.42 V |
NO LEAD |
RECTANGULAR |
1 |
5 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
UPPER |
R-XUUC-N5 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
1.97 V |
NO LEAD |
RECTANGULAR |
1 |
5 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUUC-N5 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.07 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
2.07 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
30 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
-40 Cel |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
50 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
SILICON |
600 V |
-40 Cel |
UPPER |
R-XUUC-N3 |
|||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
260 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
GULL WING |
RECTANGULAR |
1 |
223 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
51.1 ns |
|||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
260 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
223 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
51.1 ns |
||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
270 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
196 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
35 ns |
AEC-Q101 |
||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
270 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
213 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
33 ns |
AEC-Q101 |
||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
250 W |
74 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
203 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
31 ns |
AEC-Q101 |
||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
250 W |
74 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
30 ns |
AEC-Q101 |
||||||||||||||||||||
|
|
ROHM |
N-CHANNEL |
SINGLE |
NO |
33 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
209 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
e3 |
50 ns |
|||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
NO LEAD |
SQUARE |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
S-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
268 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
680 W |
120 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
270 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
63 ns |
||||||||||||||||||||||||
|
|
ROHM |
N-CHANNEL |
SINGLE |
NO |
555 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
629 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
30 V |
7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
89 ns |
AEC-Q101 |
|||||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE |
YES |
180 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
1530 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AA |
66 ns |
|||||||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE |
YES |
300 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
GULL WING |
RECTANGULAR |
1 |
380 ns |
331 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
580 ns |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
53 ns |
|||||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE |
YES |
75 W |
6 A |
PLASTIC/EPOXY |
POWER CONTROL |
7 V |
GULL WING |
RECTANGULAR |
1 |
271 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1700 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
91 ns |
||||||||||||||||||||||||
|
IXYS Corporation |
N-CHANNEL |
SINGLE |
YES |
125 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
GULL WING |
RECTANGULAR |
1 |
238 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
39 ns |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
434 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.11 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
198.8 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
950 V |
-55 Cel |
20 V |
6.4 V |
SINGLE |
R-PSFM-T3 |
RC-IGBT |
TO-247 |
89.6 ns |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.42 V |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
UPPER |
R-XUUC-N2 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
2.07 V |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
UPPER |
R-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
125 W |
34 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
85 ns |
205 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
235 ns |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
17 ns |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
268 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
POWER CONTROL |
1.85 V |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUUC-N3 |
NOT SPECIFIED |
NOT SPECIFIED |
IEC-62258-3 |
||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
MOTOR CONTROL |
1.75 V |
NO LEAD |
SQUARE |
1 |
424 ns |
2 |
UNCASED CHIP |
175 Cel |
SILICON |
750 V |
-40 Cel |
20 V |
7.2 V |
UPPER |
S-XUUC-N2 |
468 ns |
AEC-Q101 |
||||||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
272 W |
86 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
GULL WING |
RECTANGULAR |
1 |
225 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
41 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
650 W |
175 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
910 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
53 ns |
||||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
147 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
178 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
26 ns |
|||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
147 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
178 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
26 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
1150 W |
300 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
990 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
73 ns |
||||||||||||||||||||||||
|
|
ROHM |
N-CHANNEL |
SINGLE |
NO |
267 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
189 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
30 V |
7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
39 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
600 W |
140 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
1040 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
67 ns |
||||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
441 W |
145 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
255 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T4 |
COLLECTOR |
TO-247 |
49 ns |
|||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
300 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
187 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
10 |
260 |
45 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1150 W |
240 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
317 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
95 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1360 W |
310 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
357 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
88 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
830 W |
220 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
357 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
88 ns |
UL RECOGNIZED |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
650 W |
140 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
222 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
70 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1360 W |
340 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
520 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
95 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1360 W |
310 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
357 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
88 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.