14 A Insulated Gate Bipolar Transistors (IGBT) 12

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
STGPL6NC60DI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	56 W	14 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	122 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.75 V		SINGLE	R-PSFM-T3					TO-220AB		NOT SPECIFIED	NOT SPECIFIED	10.5 ns
IKA15N65H5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33.3 W	14 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			24 ns
STGP7NB60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			63 ns
STGB7NB60HDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1	220 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3			63 ns
STGF19NC60WD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	127 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.75 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB				25 ns
STGBL6NC60DT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	122 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.75 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245	10.5 ns
STGPL6NC60D	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	56 W	14 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	122 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5.75 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			10.5 ns
STGB7NB60KDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	95 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	202 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	7 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified			e3			21 ns
STGP7NB60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	95 W	14 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	202 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	7 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			21 ns
STGB7NB40LZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	100 W	14 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		GULL WING	RECTANGULAR	1	8000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	370 V		12 V	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	VOLTAGE CLAMPING		e3	30	245	5400 ns
STGIPL14K60	STMicroelectronics	N-CHANNEL	COMPLEX	NO	44 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	6	425 ns	38	IN-LINE	Insulated Gate BIP Transistors	125 Cel	SILICON	600 V				MATTE TIN	DUAL	R-PDIP-T38		ISOLATED	Not Qualified			e3			400 ns
STGB7H60DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	14 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	GULL WING	RECTANGULAR	1	263 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V	-55 Cel	20 V	6.9 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	42.8 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.