125 W Insulated Gate Bipolar Transistors (IGBT) 17

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGB10NB37LZ

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

17800 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

375 V

2.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-263AB

e3

30

245

860 ns

STGP10NB37LZ

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

17800 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

375 V

2.4 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

VOLTAGE CLAMPING

TO-220AB

e3

860 ns

STGP19NC60WD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

204 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

33 ns

STGW19NC60WD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

42 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

204 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

33 ns

STGP19NC60W

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

204 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

33 ns

STGD18N40LZ-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

125 W

25 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

22200 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

420 V

16 V

2.3 V

MATTE TIN

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-251

e3

4450 ns

STGP19NC60S

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

535 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FREE WHEELING DIODE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

23.5 ns

STGD19N40LZ

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

125 W

25 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

GULL WING

RECTANGULAR

1

22200 ns

2

SMALL OUTLINE

175 Cel

SILICON

425 V

-55 Cel

16 V

2.6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

4450 ns

AEC-Q101

FGH20N6S2D

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

28 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

105 ns

205 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

11.5 ns

STGB12NB60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

461 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

e3

39.5 ns

STGP12NB60KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

461 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

39.5 ns

NGD8201NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

8000 ns

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

400 V

15 V

2.1 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

260

6500 ns

IXYY8N90C3-TRL

IXYS Corporation

N-CHANNEL

SINGLE

YES

125 W

20 A

PLASTIC/EPOXY

POWER CONTROL

3 V

GULL WING

RECTANGULAR

1

238 ns

2

SMALL OUTLINE

175 Cel

SILICON

900 V

-55 Cel

20 V

6 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

39 ns

HGTP7N60A4-F102

Onsemi

N-CHANNEL

SINGLE

NO

125 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

85 ns

205 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

235 ns

7 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

17 ns

LGD8201ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

7000 ns

1.9 V

GULL WING

RECTANGULAR

1

14000 ns

18500 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

9000 ns

-55 Cel

15 V

24000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

6500 ns

AEC-Q101

LGD8205ATI

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

8000 ns

14000 ns

2

SMALL OUTLINE

175 Cel

SILICON

390 V

10000 ns

-55 Cel

15 V

18000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

7500 ns

AEC-Q101

LGD8201TH

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

YES

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

8000 ns

GULL WING

RECTANGULAR

1

8000 ns

14000 ns

2

SMALL OUTLINE

175 Cel

SILICON

440 V

10000 ns

-55 Cel

15 V

18000 ns

2.1 V

SINGLE

R-PSSO-G2

COLLECTOR

7500 ns

AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.