150 W Insulated Gate Bipolar Transistors (IGBT) 32

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
STGP30H60DF	STMicroelectronics	N-CHANNEL		NO	150 W	60 A												Insulated Gate BIP Transistors		150 Cel		600 V			20 V												NOT SPECIFIED	NOT SPECIFIED
FS30R06W1E3B11BOMA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO	150 W	45 A	UNSPECIFIED	POWER CONTROL		2 V	UNSPECIFIED	RECTANGULAR	6		355 ns	22	FLANGE MOUNT			150 Cel	SILICON	600 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X22		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	52 ns	UL APPROVED
IXSH24N60A	IXYS Corporation	N-CHANNEL	SINGLE	NO	150 W	48 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	500 ns	925 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	600 V			20 V		6.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e1			300 ns
IXSH24N60AU1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	48 A	PLASTIC/EPOXY	MOTOR CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	500 ns	925 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	600 V			20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247		NOT SPECIFIED	NOT SPECIFIED	300 ns
IXGH31N60	IXYS Corporation	N-CHANNEL	SINGLE	NO	150 W	60 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1	1100 ns	1600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	600 V			20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED	40 ns
STGB20N40LZ	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.8 V	GULL WING	RECTANGULAR	1		8200 ns	2	SMALL OUTLINE			175 Cel	SILICON	425 V		-55 Cel	16 V		2.5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	5200 ns	AEC-Q101
STGB20NB32LZ	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	40 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		15900 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	325 V					2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263	e3			2900 ns
STGB20NB37LZ	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		15000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON						2 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	ESD PROTECTED	TO-263AB	e3			2900 ns
NGB8206N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	390 V			15 V		2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
STGB18N40LZ-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	30 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		22200 ns	3	IN-LINE	Insulated Gate BIP Transistors		175 Cel	SILICON	420 V			16 V		2.3 V	MATTE TIN	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-262AA	e3			4450 ns
IKD10N60R	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		428 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		5.7 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-252	e3			24 ns
STGP18N40LZ	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	30 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		22200 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	420 V			16 V		2.3 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	4450 ns
STGW20NB60KD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		280 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247AC	e3			76 ns
STGB10NB40LZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		12000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	380 V					2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	245	1570 ns
NGB8202NT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	440 V			15 V		2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
MGP15N40CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	150 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	6000 ns		THROUGH-HOLE	RECTANGULAR	1	20000 ns	20500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	440 V			22 V		2.1 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	VOLTAGE CLAMPING	TO-220AB	e3		260	6000 ns
NGB8202NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL	8000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	440 V			15 V		2.1 V	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3		260	6500 ns
FGB3040G2-F085	Onsemi	N-CHANNEL		YES	150 W	41 A			7000 ns					15000 ns				Insulated Gate BIP Transistors		175 Cel		390 V			12 V		2.2 V	Matte Tin (Sn) - annealed			1					e3	30	260
FGD2736G3-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	21 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.65 V	GULL WING	RECTANGULAR	1	15000 ns	6300 ns	2	SMALL OUTLINE			175 Cel	SILICON	360 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252AA	e3	30	260	3900 ns
STGB25N40LZAG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.25 V	GULL WING	RECTANGULAR	1		14500 ns	2	SMALL OUTLINE			175 Cel	SILICON	435 V		-55 Cel	16 V		2.1 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	4560 ns	AEC-Q101
IKD10N60RFAATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		198 ns	2	SMALL OUTLINE			175 Cel	SILICON	600 V		-40 Cel	20 V		5.7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252		NOT SPECIFIED	NOT SPECIFIED	27 ns	AEC-Q101
AIHD10N60RATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		428 ns	2	SMALL OUTLINE			175 Cel	SILICON	600 V		-40 Cel	20 V		5.7 V		SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252				24 ns	AEC-Q101
AIHD10N60RFATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	20 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		198 ns	2	SMALL OUTLINE			175 Cel	SILICON	600 V		-40 Cel	20 V		5.7 V		SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252				27 ns	AEC-Q101
STGB19N40LZ	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	25 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	GULL WING	RECTANGULAR	1		22200 ns	2	SMALL OUTLINE			175 Cel	SILICON	425 V		-55 Cel	16 V		2.6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		BULK: 1000	TO-263AB	e3		245	4450 ns
FGD2736G3-F085V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	37.5 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.65 V	GULL WING	RECTANGULAR	1	15000 ns	6300 ns	2	SMALL OUTLINE			175 Cel	SILICON	330 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1					e3	30	260	3900 ns	AEC-Q101
LGB8245TI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	6000 ns		GULL WING	RECTANGULAR	1	12000 ns	12500 ns	2	SMALL OUTLINE			175 Cel	SILICON	500 V	8000 ns	-55 Cel	15 V	20000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							4400 ns	AEC-Q101
STGB25N36LZAG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.25 V	GULL WING	RECTANGULAR	1		14500 ns	2	SMALL OUTLINE			175 Cel	SILICON	385 V		-55 Cel	16 V		2.1 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				4560 ns	AEC-Q101
STGI25N36LZAG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	NO	150 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.25 V	THROUGH-HOLE	RECTANGULAR	1		14500 ns	3	IN-LINE			175 Cel	SILICON	385 V		-55 Cel	16 V		2.1 V		SINGLE	R-PSIP-T3		COLLECTOR							4560 ns	AEC-Q101
STGD25N36LZAG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.25 V	GULL WING	RECTANGULAR	1		14500 ns	2	SMALL OUTLINE			175 Cel	SILICON	385 V		-55 Cel	16 V		2.1 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252				4560 ns	AEC-Q101
LGB8202ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	14000 ns	24000 ns	2	SMALL OUTLINE			175 Cel	SILICON	440 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							18500 ns	AEC-Q101
LGB8206ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY		7000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE			175 Cel	SILICON	390 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							6500 ns	AEC-Q101
LGB8206ARI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY		7000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE			175 Cel	SILICON	390 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR							6500 ns	AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.