180 W Insulated Gate Bipolar Transistors (IGBT) 5

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
STGWS38IH130D	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	55 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	740 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1300 V		25 V	5.75 V	MATTE TIN	SINGLE	R-PSFM-T3		Not Qualified			e3
DF120R12W2H3B27BOMA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO	180 W	50 A	UNSPECIFIED		2.4 V	UNSPECIFIED	RECTANGULAR	3	360 ns	20	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X20	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	60 ns	UL APPROVED
IXGA20N120A3-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	180 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1	1530 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V	-55 Cel	20 V	5 V		SINGLE	R-PSSO-G2	COLLECTOR		LOW CONDUCTION LOSS	TO-263AA				66 ns
STGWA30IH65DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.05 V	THROUGH-HOLE	RECTANGULAR	1	312 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	7 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED
STGP30IH65DF	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.05 V	THROUGH-HOLE	RECTANGULAR	1	233 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	30 V	7 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-220AB

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.