200 W Insulated Gate Bipolar Transistors (IGBT) 17

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
STGP35HF60W	STMicroelectronics	N-CHANNEL		NO	200 W	60 A											Insulated Gate BIP Transistors		150 Cel		600 V		20 V	5.75 V	MATTE TIN								e3
IXGH32N60AU1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL	2.9 V	THROUGH-HOLE	RECTANGULAR	1	175 ns	400 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	600 V		20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	60 ns
IXGH39N60B	IXYS Corporation	N-CHANNEL	SINGLE	NO	200 W	76 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	360 ns	710 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	55 ns
IXGH30N60BD1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	190 ns	200 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	25 ns
STGW35HF60WDI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		295 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.75 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3			45 ns
STGW35NB60S	STMicroelectronics	N-CHANNEL	SINGLE	NO	200 W	70 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		3600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5 V		SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-247		NOT SPECIFIED	NOT SPECIFIED	153 ns
STGW35HF60WD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		295 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.75 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			45 ns
STGB30NC60WT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		189 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.75 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245	42.5 ns
STGB20NC60VT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		280 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.75 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245	42.5 ns
STGB20NB37LZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	200 W	40 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		15000 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON				2 V	MATTE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e3			2900 ns
STGW35HF60W	STMicroelectronics	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		295 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.75 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			45 ns
STGP30NC60W	STMicroelectronics	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		189 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.75 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			42.5 ns
STGW30NC60W	STMicroelectronics	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		189 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5.75 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3			Not Qualified		TO-247AC	e3			42.5 ns
STGW35NB60SD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	70 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		3600 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V	5 V	TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247AA	e3			153 ns
STGB20NC60V	STMicroelectronics	N-CHANNEL	SINGLE	YES	200 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1		280 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V	-55 Cel	20 V	5.75 V		SINGLE	R-PSSO-G2					TO-263AB		NOT SPECIFIED	NOT SPECIFIED	42.5 ns
GT50J341,Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	450 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V		25 V			SINGLE	R-PSFM-T3									270 ns
IKW15N120BH6XKSA1	Infineon Technologies	N-Channel			200 W	30 A			2.3 V					373 ns					175 Cel	SILICON	1200 V	-40 Cel	20 V	6.3 V	TIN								e3			46 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.