YES Insulated Gate Bipolar Transistors (IGBT) 227

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXGA30N120B3-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	300 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	GULL WING	RECTANGULAR	1	380 ns	331 ns	2	SMALL OUTLINE	150 Cel	SILICON	1200 V		-55 Cel	20 V	580 ns	5 V		SINGLE	R-PSSO-G2		COLLECTOR	LOW CONDUCTION LOSS	TO-263AB				53 ns
IXGT6N170AHV-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	75 W	6 A	PLASTIC/EPOXY	POWER CONTROL		7 V	GULL WING	RECTANGULAR	1		271 ns	2	SMALL OUTLINE	150 Cel	SILICON	1700 V		-55 Cel	20 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-268AA				91 ns
IXYY8N90C3-TRL	IXYS Corporation	N-CHANNEL	SINGLE	YES	125 W	20 A	PLASTIC/EPOXY	POWER CONTROL		3 V	GULL WING	RECTANGULAR	1		238 ns	2	SMALL OUTLINE	175 Cel	SILICON	900 V		-55 Cel	20 V		6 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-252AA				39 ns
IGC41T120T8QX7SA2	Infineon Technologies	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.42 V	NO LEAD	RECTANGULAR	1			2	UNCASED CHIP	175 Cel	SILICON	1200 V		-40 Cel	20 V		6.3 V		UPPER	R-XUUC-N2						NOT SPECIFIED	NOT SPECIFIED
IGC50T120T8RLX7SA2	Infineon Technologies	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		2.07 V	NO LEAD	RECTANGULAR	1			3	UNCASED CHIP	175 Cel	SILICON	1200 V		-40 Cel	20 V		6.3 V		UPPER	R-XUUC-N3						NOT SPECIFIED	NOT SPECIFIED
ISL9V2040D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.9 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE	175 Cel	SILICON	390 V		-40 Cel	12 V		2.2 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-252AA		NOT SPECIFIED	NOT SPECIFIED	2780 ns
6MS24017P43W41646NOSA1	Infineon Technologies	N-Channel	COMPLEX	YES			UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	12				MICROELECTRONIC ASSEMBLY	55 Cel	SILICON	1700 V		-25 Cel					UNSPECIFIED	R-XXMA-X						NOT SPECIFIED	NOT SPECIFIED
SIGC28T60EX1SA4	Infineon Technologies	N-CHANNEL	SINGLE	YES			UNSPECIFIED	POWER CONTROL		1.85 V	NO LEAD	RECTANGULAR	1			3	UNCASED CHIP	175 Cel	SILICON	600 V		-40 Cel	20 V		6.5 V		UPPER	R-XUUC-N3						NOT SPECIFIED	NOT SPECIFIED		IEC-62258-3
AFGB30T65SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		78.7 ns	2	SMALL OUTLINE	175 Cel	SILICON	650 V		-55 Cel	30 V		6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263	e3	30	260	33.6 ns	AEC-Q101
NCG225L75NF8M1	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		1.75 V	NO LEAD	SQUARE	1		424 ns	2	UNCASED CHIP	175 Cel	SILICON	750 V		-40 Cel	20 V		7.2 V		UPPER	S-XUUC-N2								468 ns	AEC-Q101
STGB50H65FB2	STMicroelectronics	N-CHANNEL	SINGLE	YES	272 W	86 A	PLASTIC/EPOXY	POWER CONTROL		2 V	GULL WING	RECTANGULAR	1		225 ns	2	SMALL OUTLINE	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-263AB				41 ns
LGD15N41ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	175 Cel	SILICON	440 V	17000 ns	-55 Cel	15 V	25000 ns	1.9 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-252				9500 ns	AEC-Q101
LGB15N41ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	175 Cel	SILICON	440 V	17000 ns	-55 Cel	15 V	25000 ns	1.9 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-263AB				9500 ns	AEC-Q101
LGD18N45TH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	9000 ns	2.85 V	GULL WING	RECTANGULAR	1	7000 ns	5400 ns	2	SMALL OUTLINE	175 Cel	SILICON	500 V	10400 ns	-55 Cel	18 V	19000 ns	1.9 V		SINGLE	R-PSSO-G2		COLLECTOR						2920 ns	AEC-Q101
LGB8204ATH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	175 Cel	SILICON	430 V	11000 ns	-55 Cel	18 V	25000 ns	1.9 V		SINGLE	R-PSSO-G2		COLLECTOR						5200 ns	AEC-Q101
LGD8201ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	125 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.9 V	GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	175 Cel	SILICON	440 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR						6500 ns	AEC-Q101
LGB8207TH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	165 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2000 ns		GULL WING	RECTANGULAR	1	15000 ns	14700 ns	2	SMALL OUTLINE	175 Cel	SILICON	365 V	2750 ns	-55 Cel	15 V	21000 ns	2 V		SINGLE	R-PSSO-G2		COLLECTOR						2450 ns	AEC-Q101
LGD18N40ATH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	115 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	175 Cel	SILICON	430 V	11000 ns	-55 Cel	18 V	25000 ns	1.9 V		SINGLE	R-PSSO-G2		COLLECTOR						5200 ns	AEC-Q101
IXYT55N120A4HV	Littelfuse	N-CHANNEL	SINGLE	YES	650 W	175 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	GULL WING	RECTANGULAR	1		910 ns	2	SMALL OUTLINE	175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-268AA				53 ns
STGB20H65FB2	STMicroelectronics	N-CHANNEL	SINGLE	YES	147 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		178 ns	2	SMALL OUTLINE	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-263AB				26 ns
IXYT85N120A4HV	Littelfuse	N-CHANNEL	SINGLE	YES	1150 W	300 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	GULL WING	RECTANGULAR	1		990 ns	2	SMALL OUTLINE	175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-268AA				73 ns
STGB20H65DFB2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	147 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		178 ns	2	SMALL OUTLINE	175 Cel	SILICON	650 V		-55 Cel	20 V		7 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-263AB				26 ns
LGB18N40ATH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	115 W	18 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	15000 ns	13000 ns	2	SMALL OUTLINE	175 Cel	SILICON	430 V	11000 ns	-55 Cel	18 V	25000 ns			SINGLE	R-PSSO-G2		COLLECTOR						5200 ns	AEC-Q101
LGB8245TI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	6000 ns		GULL WING	RECTANGULAR	1	12000 ns	12500 ns	2	SMALL OUTLINE	175 Cel	SILICON	500 V	8000 ns	-55 Cel	15 V	20000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR						4400 ns	AEC-Q101
IXYT40N120A4HV	Littelfuse	N-CHANNEL	SINGLE	YES	600 W	140 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	GULL WING	RECTANGULAR	1		1040 ns	2	SMALL OUTLINE	175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-268AA				67 ns
STGB25N36LZAG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.25 V	GULL WING	RECTANGULAR	1		14500 ns	2	SMALL OUTLINE	175 Cel	SILICON	385 V		-55 Cel	16 V		2.1 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-263AB				4560 ns	AEC-Q101
STGD25N36LZAG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.25 V	GULL WING	RECTANGULAR	1		14500 ns	2	SMALL OUTLINE	175 Cel	SILICON	385 V		-55 Cel	16 V		2.1 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-252				4560 ns	AEC-Q101
LGB8202ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns		GULL WING	RECTANGULAR	1	14000 ns	24000 ns	2	SMALL OUTLINE	175 Cel	SILICON	440 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR						18500 ns	AEC-Q101
LGB8206ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY		7000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	175 Cel	SILICON	390 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR						6500 ns	AEC-Q101
LGB8206ARI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY		7000 ns		GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	175 Cel	SILICON	390 V	9000 ns	-55 Cel	15 V	24000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR						6500 ns	AEC-Q101
LGD8205ATI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	125 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	8000 ns	14000 ns	2	SMALL OUTLINE	175 Cel	SILICON	390 V	10000 ns	-55 Cel	15 V	18000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR						7500 ns	AEC-Q101
LGB8207ATH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	165 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2000 ns		GULL WING	RECTANGULAR	1	15000 ns	14700 ns	2	SMALL OUTLINE	175 Cel	SILICON	365 V	2750 ns	-55 Cel	15 V	21000 ns	2 V		SINGLE	R-PSSO-G2		COLLECTOR						2450 ns	AEC-Q101
IXGA48N60C3-TRL	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		187 ns	2	SMALL OUTLINE	150 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263AB	e3	10	260	45 ns
LGD8209TI	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	94 W	12 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1			2	SMALL OUTLINE	175 Cel	SILICON	445 V		-55 Cel	15 V		2 V		SINGLE	R-PSSO-G2		COLLECTOR
LGD8201TH	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	125 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns		GULL WING	RECTANGULAR	1	8000 ns	14000 ns	2	SMALL OUTLINE	175 Cel	SILICON	440 V	10000 ns	-55 Cel	15 V	18000 ns	2.1 V		SINGLE	R-PSSO-G2		COLLECTOR						7500 ns	AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.