Fairchild Semiconductor Insulated Gate Bipolar Transistors (IGBT) 9

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGH15T120SMD_F155	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	30 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		534 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		25 V	7.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			74 ns
FGH40T120SMD_F155	Fairchild Semiconductor	N-CHANNEL		NO	555 W	80 A											Insulated Gate BIP Transistors	175 Cel		1200 V		25 V	7.5 V	MATTE TIN								e3
HGT1N40N60A4D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	110 A	PLASTIC/EPOXY	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1	95 ns	240 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	7 V		UPPER	R-PUFM-X4	1	ISOLATED	Not Qualified	LOW CONDUCTION LOSS					47 ns
FGP30N6S2D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	45 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	100 ns	163 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			28 ns
FGH60N6S2	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	625 W	75 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	90 ns	187 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			59 ns
FMG1G100US60L	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	100 A	PLASTIC/EPOXY	MOTOR CONTROL	2.8 V	UNSPECIFIED	RECTANGULAR	1		320 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	600 V		20 V			UPPER	R-PUFM-X7		ISOLATED	Not Qualified	LOW CONDUCTION LOSS			NOT SPECIFIED	NOT SPECIFIED	85 ns
FGH20N6S2D	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	28 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	105 ns	205 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			11.5 ns
SGL160N60UFTU	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	250 W	160 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	150 ns	262 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-264AA	e3			150 ns
FGH60N60SFDTU_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	378 W	120 A	PLASTIC/EPOXY	POWER CONTROL	2.9 V	THROUGH-HOLE	RECTANGULAR	1	62 ns	166 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	6.6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-247	e3			76 ns	AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.