Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 1,063

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SGP15N60XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

54 ns

SGW15N60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

54 ns

SKW25N120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

46 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

862 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

86 ns

IKW15T120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

85 ns

SKP15N60XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

54 ns

SKW15N60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

54 ns

BSM100GAL120DLCKHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

205 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

480 ns

5

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

SKW30N60FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

391 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

78 ns

IHW30N60TFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

187 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

50 ns

IHW15T120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

85 ns

IKP03N120H2XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

16.1 ns

IKW03N120H2FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

16.1 ns

IKW08T120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

16 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

710 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

66 ns

SKW15N120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

683 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

68 ns

SKW30N60HSFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

39 ns

BSM200GA120DLCHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

370 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

650 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL RECOGNIZED

BSM50GB60DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

151 ns

7

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

BSM20GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

310 ns

24

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

100 ns

SIGC25T60NCX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

40 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

135 ns

3

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

BSM300GB60DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

NO

375 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

402 ns

7

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

176 ns

SIGC18T60UNX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

100 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

23.5 ns

BSM200GA120DLCSHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

370 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

SIGC07T60NCX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BSM15GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

100 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

400 ns

24

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

140 ns

BSM200GB60DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

230 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

326 ns

7

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

229 ns

BSM50GP60GBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

105 ns

BSM200GD60DLCBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

226 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

326 ns

19

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X19

ISOLATED

Not Qualified

229 ns

SIGC42T60NCX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

160 ns

4

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

55 ns

BSM75GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

100 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

400 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

140 ns

BSM400GA120DLCHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

BSM200GA120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

550 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

630 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

BSM10GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

105 ns

SIGC18T60NCX1SA6

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

135 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

SIGC12T60NCX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

135 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

BSM100GB60DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

130 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

180 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

37 ns

BSM30GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

105 ns

SIGC25T60UNX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

60 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

151 ns

3

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

BSM300GA120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

430 A

UNSPECIFIED

GENERAL PURPOSE SWITCHING

UNSPECIFIED

RECTANGULAR

1

680 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

BSM100GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

135 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

330 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

110 ns

BSM50GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

105 ns

FZ400R12KE3HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

650 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

830 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

BSM150GB60DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

NO

180 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

260 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

155 ns

BSM75GB60DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

NO

100 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

205 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

90 ns

BSM300GA120DLCSHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

570 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IHW30N90TFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

691 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

82 ns

IHW30N100TFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

702 ns

3

FLANGE MOUNT

175 Cel

SILICON

1000 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

90 ns

SKP10N60AXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

224 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

IKW40N120T2FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

60 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.