| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
190 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
416 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
61 ns |
||||||||||||||||||||||
|
IXYS Corporation |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
180 W |
50 A |
UNSPECIFIED |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
3 |
360 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
UL APPROVED |
||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
145 W |
20 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
12 |
355 ns |
34 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X34 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
67 ns |
UL APPROVED |
|||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
525 ns |
33 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
196 ns |
|||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
515 W |
140 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
410 ns |
29 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X29 |
ISOLATED |
UL RECOGNIZED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
215 W |
65 A |
UNSPECIFIED |
POWER CONTROL |
1.7 V |
UNSPECIFIED |
RECTANGULAR |
4 |
342 ns |
28 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
34 ns |
UL APPROVED |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
385 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
178 ns |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
535 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
564 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
154 ns |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
232 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
Tin (Sn) |
SINGLE |
R-PSFM-T3 |
TO-247AD |
e3 |
|||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
417 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
341 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247AD |
e3 |
139 ns |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
595 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
380 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.5 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247AD |
e3 |
150 ns |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
49 W |
9 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
105 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
20 V |
7 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
e3 |
30 |
260 |
134 ns |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
NO |
54 W |
24 A |
Insulated Gate BIP Transistors |
175 Cel |
600 V |
20 V |
7 V |
MATTE TIN |
e3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
259 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
406 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
|||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
259 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
406 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
|||||||||||||||||||||
|
|
Vishay Intertechnology |
N-CHANNEL |
PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
57 W |
138 A |
PLASTIC/EPOXY |
POWER CONTROL |
PIN/PEG |
RECTANGULAR |
2 |
458 ns |
14 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
20 V |
6.2 V |
UPPER |
R-PUFM-P14 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
247 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
200 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
35 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
||||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
MOTOR CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
610 ns |
24 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
|||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
40 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
610 ns |
24 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
||||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
40 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
28 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
||||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
75 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
28 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
75 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
610 ns |
24 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
||||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
105 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
28 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X28 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
105 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
610 ns |
24 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
||||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
105 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
610 ns |
35 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
||||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
150 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1100 ns |
7 |
FLANGE MOUNT |
125 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
450 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
250 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1200 ns |
7 |
FLANGE MOUNT |
125 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
480 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
375 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1300 ns |
11 |
FLANGE MOUNT |
125 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
385 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
600 A |
UNSPECIFIED |
MOTOR CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1300 ns |
11 |
FLANGE MOUNT |
125 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
75 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1100 ns |
7 |
FLANGE MOUNT |
125 Cel |
SILICON |
1700 V |
-40 Cel |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
450 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||
|
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
125 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1100 ns |
7 |
FLANGE MOUNT |
125 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
450 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
215 W |
2.4 V |
320 ns |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
ISOLATED |
43 ns |
|||||||||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
300 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
650 ns |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
570 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
650 ns |
5 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
16 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
260 ns |
17 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X17 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
27 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
190 ns |
26 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X26 |
ISOLATED |
33 ns |
||||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1000 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
3550 ns |
9 |
FLANGE MOUNT |
SILICON |
3300 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
1150 ns |
||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
4050 W |
1060 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
2 |
710 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
UL RECOGNIZED |
||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1060 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
710 ns |
11 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
16 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
260 ns |
23 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
15 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
481 ns |
23 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
|||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
27 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
508 ns |
23 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
97 ns |
|||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
185 ns |
23 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
40 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
640 ns |
22 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
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|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
40 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
640 ns |
22 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X22 |
ISOLATED |
120 ns |
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|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
55 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
160 ns |
23 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
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|
Infineon Technologies |
N-CHANNEL |
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
700 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
690 ns |
33 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X33 |
ISOLATED |
230 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.