Insulated Gate Bipolar Transistors (IGBT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SGP30N60HSXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

39 ns

SGW30N60HSFKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

39 ns

SGW25N120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

46 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

862 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

86 ns

SGW50N60HSFKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

79 ns

IHW40N60RFFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

228 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IKW15N120H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

49 ns

BSM50GD170DLBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

100 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

930 ns

21

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

200 ns

FD600R12KF4NOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

1150 ns

5

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

800 ns

FF600R12KF4NOSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

600 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

1150 ns

10

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

800 ns

FZ800R16KF4NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

800 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

2

1600 ns

5

FLANGE MOUNT

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1000 ns

FD400R33KF2CNOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

4800 W

660 A

UNSPECIFIED

POWER CONTROL

4.25 V

UNSPECIFIED

RECTANGULAR

1

1900 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

480 ns

FD800R33KF2CNOSA1

Infineon Technologies

N-CHANNEL

COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1300 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1900 ns

7

FLANGE MOUNT

175 Cel

SILICON

3300 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

480 ns

IHW30N160R2FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

675 ns

3

FLANGE MOUNT

175 Cel

SILICON

1600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

IGW40N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

249 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

48 ns

FS200R12KT4RBOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

280 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

600 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL RECOGNIZED

IGA30N60H3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

18 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

262 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

IGP20N60H3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

31 ns

IGW20N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

37 ns

IGW30N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

262 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

50 ns

IGW50N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

297 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

54 ns

IKP20N60H3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

31 ns

IKW30N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

262 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

50 ns

IKW50N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

297 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

54 ns

IHY20N135R3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

505 ns

3

FLANGE MOUNT

SILICON

1350 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

FS200R07A1E3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

13

FLANGE MOUNT

175 Cel

SILICON

650 V

UPPER

R-XUFM-X13

1

ISOLATED

Not Qualified

120 ns

FS400R07A1E3BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

500 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

580 ns

13

FLANGE MOUNT

175 Cel

SILICON

650 V

UPPER

R-XUFM-X13

1

ISOLATED

Not Qualified

200 ns

IHW20N135R3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

385 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1350 V

25 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

505 ns

IHW40N60RFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

264 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

e3

FF600R17ME4BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

950 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

980 ns

11

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

320 ns

IGW40T120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

92 ns

IGW75N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

140 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

IKW75N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

FS600R07A2E3BOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1250 W

530 A

UNSPECIFIED

POWER CONTROL

1.6 V

UNSPECIFIED

RECTANGULAR

6

540 ns

33

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

IKU06N60RBKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

335 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-251

NOT SPECIFIED

NOT SPECIFIED

22 ns

IGC07T120T8LX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

2.02 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IKW60N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

314 ns

3

FLANGE MOUNT

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

64 ns

IGW60N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

314 ns

3

FLANGE MOUNT

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

64 ns

IHW40N120R3FKSA1

Infineon Technologies

N-CHANNEL

NO

429 W

80 A

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

6.4 V

TIN

e3

IKB03N120H2ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

9.6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

403 ns

3

SMALL OUTLINE

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSSO-G3

1

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e3

16.1 ns

IHW30N135R3FKSA1

Infineon Technologies

N-CHANNEL

NO

349 W

60 A

Insulated Gate BIP Transistors

175 Cel

1350 V

20 V

6.4 V

TIN

e3

IHW40N135R3FKSA1

Infineon Technologies

N-CHANNEL

NO

429 W

80 A

Insulated Gate BIP Transistors

175 Cel

1350 V

20 V

6.4 V

TIN

e3

IGW100N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

714 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

333 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

72 ns

FP15R12W2T4BOMA1

Infineon Technologies

145 W

15 A

2.25 V

1

Insulated Gate BIP Transistors

175 Cel

1200 V

20 V

NOT SPECIFIED

NOT SPECIFIED

FS100R17N3E4BOSA1

Infineon Technologies

600 W

100 A

2.3 V

1

Insulated Gate BIP Transistors

175 Cel

1700 V

20 V

NOT SPECIFIED

NOT SPECIFIED

FS150R17N3E4BOSA1

Infineon Technologies

835 W

150 A

2.3 V

1

Insulated Gate BIP Transistors

175 Cel

1700 V

20 V

NOT SPECIFIED

NOT SPECIFIED

FZ250R65KE3NPSA1

Infineon Technologies

4800 W

250 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

6500 V

20 V

NOT SPECIFIED

NOT SPECIFIED

FS400R12A2T4BOSA1

Infineon Technologies

1500 W

400 A

1.85 V

3

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

NOT SPECIFIED

NOT SPECIFIED

IGW40N65F5FKSA1

Infineon Technologies

N-CHANNEL

NO

255 W

74 A

Insulated Gate BIP Transistors

175 Cel

650 V

20 V

4.8 V

TIN

e3

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.