NO Other Function Transistors 43

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

S1236

Toshiba

NPN

SINGLE

NO

10 MHz

40 W

4 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

2N5952-D74Z

Fairchild Semiconductor

N-CHANNEL

NO

.35 W

Other Transistors

JUNCTION

150 Cel

Matte Tin (Sn)

e3

DP200

Kodenshi Auk

PNP

SINGLE

NO

.625 W

1 A

1

Other Transistors

40

150 Cel

2N4338-E3

Vishay Intertechnology

N-CHANNEL

NO

.3 W

Other Transistors

JUNCTION

200 Cel

MATTE TIN

1

e3

40

260

2N4339-E3

Vishay Intertechnology

N-CHANNEL

NO

.3 W

Other Transistors

JUNCTION

200 Cel

Matte Tin (Sn)

1

e3

BD243CTU

Fairchild Semiconductor

NPN

SINGLE

NO

65 W

6 A

1

Other Transistors

15

150 Cel

Matte Tin (Sn)

e3

BF245A,126

NXP Semiconductors

N-CHANNEL

NO

.3 W

Other Transistors

JUNCTION

150 Cel

Matte Tin (Sn)

e3

2SC6142(Q)

Toshiba

NPN

SINGLE

NO

1.1 W

1.5 A

1

Other Transistors

100

150 Cel

2SJ681(Q)

Toshiba

P-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

TTC5200(Q)

Toshiba

NPN

SINGLE

NO

150 W

15 A

1

Other Transistors

80

150 Cel

TTC0002(Q)

Toshiba

NPN

SINGLE

NO

180 W

18 A

1

Other Transistors

80

150 Cel

STX93003-AP

STMicroelectronics

PNP

SINGLE

NO

1.5 W

1 A

1

Other Transistors

16

150 Cel

Matte Tin (Sn)

e3

2SA1827S-AY

Onsemi

PNP

SINGLE

NO

1.5 W

4 A

1

Other Transistors

140

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4731S-AY

Onsemi

NPN

SINGLE

NO

1.5 W

4 A

1

Other Transistors

140

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4731T-AY

Onsemi

NPN

SINGLE

NO

1.5 W

4 A

1

Other Transistors

200

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

TIP47-S

Bourns

NPN

SINGLE

NO

40 W

1 A

1

Other Transistors

30

150 Cel

2SA1987O(Q)

Toshiba

PNP

SINGLE

NO

180 W

15 A

1

Other Transistors

80

150 Cel

2SC5200O(Q)

Toshiba

NPN

SINGLE

NO

150 W

15 A

1

Other Transistors

80

150 Cel

30

260

BD244B-S

Bourns

PNP

SINGLE

NO

65 W

6 A

1

Other Transistors

15

150 Cel

BD244C-S

Bourns

PNP

SINGLE

NO

65 W

6 A

1

Other Transistors

15

150 Cel

TTC008(Q)

Toshiba

NPN

SINGLE

NO

1.1 W

1.5 A

1

Other Transistors

80

150 Cel

TTA0002(Q)

Toshiba

PNP

SINGLE

NO

180 W

18 A

1

Other Transistors

80

150 Cel

TTC012(Q)

Toshiba

NPN

SINGLE

NO

1.1 W

2 A

1

Other Transistors

80

150 Cel

NJW44H11G

Onsemi

NPN

SINGLE

NO

120 W

10 A

1

Other Transistors

80

150 Cel

Matte Tin (Sn) - annealed

e3

2SA1855S-AY

Onsemi

PNP

SINGLE

NO

1.5 W

4 A

1

Other Transistors

140

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4837S-AY

Onsemi

NPN

SINGLE

NO

1.5 W

4 A

1

Other Transistors

140

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

J108,126

NXP Semiconductors

N-CHANNEL

NO

.4 W

Other Transistors

JUNCTION

150 Cel

J110,126

NXP Semiconductors

N-CHANNEL

NO

.4 W

Other Transistors

JUNCTION

150 Cel

J111,126

NXP Semiconductors

N-CHANNEL

NO

.4 W

Other Transistors

JUNCTION

150 Cel

BF357

Texas Instruments

NPN

SINGLE

NO

1.6 MHz

.2 W

.05 A

1

Other Transistors

150 Cel

BFW20

Texas Instruments

PNP

SINGLE

NO

40 MHz

.36 W

1

Other Transistors

175 Cel

BC635-16,126

NXP Semiconductors

NPN

SINGLE

NO

100 MHz

.83 W

1 A

1

Other Transistors

100

150 Cel

BC875,126

NXP Semiconductors

NPN

DARLINGTON

NO

200 MHz

.6 W

1 A

Other Transistors

2000

150 Cel

PBSS4350S,126

NXP Semiconductors

NPN

SINGLE

NO

100 MHz

.83 W

3 A

1

Other Transistors

100

150 Cel

PBSS8110AS,126

NXP Semiconductors

NPN

SINGLE

NO

100 MHz

.83 W

1 A

1

Other Transistors

80

150 Cel

PBSS8110S,126

NXP Semiconductors

NPN

SINGLE

NO

100 MHz

.83 W

1 A

1

Other Transistors

80

150 Cel

PBSS9110AS,126

NXP Semiconductors

PNP

SINGLE

NO

100 MHz

.83 W

1 A

1

Other Transistors

125

150 Cel

PBSS9110S,126

NXP Semiconductors

PNP

NO

100 MHz

.83 W

1 A

Other Transistors

125

150 Cel

PH2369,126

NXP Semiconductors

NPN

SINGLE

NO

500 MHz

.5 W

.2 A

1

Other Transistors

40

150 Cel

PN2369A,126

NXP Semiconductors

NPN

SINGLE

NO

500 MHz

.5 W

.2 A

1

Other Transistors

40

150 Cel

BUD42D-001

Onsemi

NPN

SINGLE

NO

25 W

4 A

1

Other Transistors

8

150 Cel

TIN LEAD

1

e0

235

BC337-025

Onsemi

NPN

SINGLE

NO

1.5 W

.8 A

1

Other Transistors

160

150 Cel

TIN LEAD

e0

235

BC337-040

Onsemi

NPN

SINGLE

NO

1.5 W

.8 A

1

Other Transistors

250

150 Cel

TIN LEAD

e0

235

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.