YES Other Function Transistors 173

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
MT3S20TU(TE85L)	Toshiba	NPN	SINGLE	YES	5000 MHz	.9 W	.08 A		1		Other Transistors		100	150 Cel
MT3S20P(TE12L,F)	Toshiba	NPN	SINGLE	YES	5000 MHz	.4 W	.08 A		1		Other Transistors		100	150 Cel
SSM3J114TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.8 A
SSM3J46CTB(TPL3)	Toshiba	P-CHANNEL	SINGLE	YES				ENHANCEMENT MODE	1	2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2 A
SSM6J409TU(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1 W		ENHANCEMENT MODE	1	9.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		9.5 A
SSM6P35FE(TE85L,F)	Toshiba	P-CHANNEL		YES		.15 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
2SC6026CT-Y(TPL3)	Toshiba	NPN	SINGLE	YES	60 MHz	.1 W	.1 A		1		Other Transistors		120	150 Cel
PMN34UP,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		6.25 W		ENHANCEMENT MODE	1	5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	5 A	1	e3	30	260
2SJ599(0)-Z-E1-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES		35 W		ENHANCEMENT MODE	1	20 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		20 A
2SJ599(0)-Z-E2-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES		35 W		ENHANCEMENT MODE	1	20 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		20 A
2SJ690-T1B-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES		1.25 W		ENHANCEMENT MODE	1	2.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2.5 A
NE5820M53-T1-A	Renesas Electronics	P-CHANNEL	SINGLE	YES				DEPLETION MODE	1		Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel
2SC4783-T1-A	Renesas Electronics	NPN	SINGLE	YES	150 MHz	.2 W	.1 A		1		Other Transistors		90	150 Cel	TIN BISMUTH			e6
2SC4942-T1-AZ	Renesas Electronics	NPN	SINGLE	YES		2 W	1 A		1		Other Transistors		30	150 Cel
SSM6L16FE(TE85L,F)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		.15 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
SSM3J16CT(TPL3)	Toshiba	P-CHANNEL	SINGLE	YES		.1 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
EC3A03B-TL-H	Onsemi	N-CHANNEL		YES		.1 W					Other Transistors	JUNCTION		150 Cel			1
NDS9407-G	Fairchild Semiconductor	P-CHANNEL	SINGLE	YES		2.5 W		ENHANCEMENT MODE	1	3 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	MATTE TIN	3 A	1	e3	30	260
BCP69-16/DG,115	NXP Semiconductors	PNP	SINGLE	YES	40 MHz	1.35 W	2 A		1		Other Transistors		100	150 Cel
EC3A04B-3-TL-H	Onsemi	N-CHANNEL		YES		.1 W					Other Transistors	JUNCTION		150 Cel			1
EC3H02BA-TL-H	Onsemi	NPN	SINGLE	YES	5000 MHz	.1 W	.07 A		1		Other Transistors		120	150 Cel			1
FW907-TL-E	Onsemi	N-CHANNEL AND P-CHANNEL		YES		2.5 W		ENHANCEMENT MODE		10 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Bismuth (Sn/Bi)	10 A	1	e6
PMR670UPE,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		.3 W		ENHANCEMENT MODE	1	.48 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	.48 A	1	e3	30	260
SSM6P16FE(TE85L,F)	Toshiba	P-CHANNEL		YES		.15 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
UPA1950TE-T1-AT	Renesas Electronics	P-CHANNEL		YES		1.15 W		ENHANCEMENT MODE		2.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	MATTE TIN	2.5 A		e3		260
MCH6331-TL-E	Onsemi	P-CHANNEL	SINGLE	YES		1.5 W		ENHANCEMENT MODE	1	3.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Bismuth (Sn/Bi)	3.5 A	1	e6
PMN40UPE,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		8.33 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	6 A	1	e3	30	260
PMN27XPE,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		8.33 W		ENHANCEMENT MODE	1	4.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	4.4 A	1	e3	30	260
PMN50UPE,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		5 W		ENHANCEMENT MODE	1	3.6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	3.6 A	1	e3	30	260
MT3S113P(TE12L,F)	Toshiba	NPN	SINGLE	YES	5500 MHz	1.6 W	.1 A		1		Other Transistors		200	150 Cel
2SC5095O(TE85L,F)	Toshiba	NPN	SINGLE	YES	7000 MHz	.1 W	.015 A		1		Other Transistors		80	125 Cel
2SC5087Y(TE85L,F)	Toshiba	NPN	SINGLE	YES	5000 MHz	.15 W	.08 A		1		Other Transistors		120	125 Cel
2SC5085Y(TE85L,F)	Toshiba	NPN	SINGLE	YES	5000 MHz	.1 W	.08 A		1		Other Transistors		120	125 Cel
SSM3J129TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		1 W		ENHANCEMENT MODE	1	4.6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4.6 A
SSM3J15CT(TPL3)	Toshiba	P-CHANNEL	SINGLE	YES		.1 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
SSM3J14T(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1.25 W		ENHANCEMENT MODE	1	2.7 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2.7 A
SSM3J118TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.4 A
SSM3J306T(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.7 W		ENHANCEMENT MODE	1	2.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2.4 A
SSM3J307T(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1.25 W		ENHANCEMENT MODE	1	5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5 A
SSM3J321T(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1.25 W		ENHANCEMENT MODE	1	5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5.2 A
SSM3J108TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.8 A
SSM6J206FE(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.5 W		ENHANCEMENT MODE	1	2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2 A
SSM6L11TU(TE85L,F)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		.5 W		ENHANCEMENT MODE		.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.5 A
PMFPB8040XP,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		6.25 W		ENHANCEMENT MODE	1	3.7 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	3.7 A	1	e3	30	260
SSM5G10TU(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		125 Cel		1.5 A
HN1C03FU-A(TE85L,F)	Toshiba	NPN	SINGLE	YES		.2 W	.3 A		1		Other Transistors		200	150 Cel
2SA1483Y(TE12L,F)	Toshiba	PNP	SINGLE	YES	100 MHz	1 W	.2 A		1		Other Transistors		120	150 Cel
NE3520S03-A	Renesas Electronics	N-CHANNEL		YES		.165 W					Other Transistors	JUNCTION		125 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.