| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
40 A |
6.8 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.036 ohm |
6.8 A |
DUAL |
R-PDSO-N8 |
1 |
e3 |
30 |
260 |
AEC-Q101 |
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|
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
160 A |
200 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0202 ohm |
40 A |
SINGLE |
R-PSSO-G5 |
DRAIN |
TO-263 |
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|
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
160 A |
200 mJ |
5 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0205 ohm |
40 A |
SINGLE |
R-PSFM-T5 |
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|
NXP Semiconductors |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
45 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
60 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.09 ohm |
4 A |
SINGLE |
R-PSSO-G6 |
Not Qualified |
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|
|
STMicroelectronics |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.045 ohm |
5 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
LOW THRESHOLD |
e4 |
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|
|
STMicroelectronics |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.25 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
24 A |
6 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.03 ohm |
6 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
LOW THRESHOLD |
e4 |
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|
|
Onsemi |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
18 A |
7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.03 ohm |
6.2 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
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|
Onsemi |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
18 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.03 ohm |
6.2 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e0 |
235 |
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|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.44 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
36 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.028 ohm |
5.8 A |
DUAL |
R-PDSO-G6 |
e3 |
260 |
79 pF |
MIL-STD-202 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
200 A |
210 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.004 ohm |
50 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
TO-252 |
AEC-Q101 |
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|
|
Texas Instruments |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
10 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
BOTTOM |
R-PBGA-B10 |
1 |
e4 |
30 |
260 |
198 pF |
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|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.9 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
2 |
60 A |
14.7 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.017 ohm |
10.7 A |
DUAL |
S-PDSO-F8 |
e3 |
260 |
160 pF |
MIL-STD-202 |
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|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
2 |
55 A |
24 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.02 ohm |
9 A |
DUAL |
S-PDSO-F8 |
1 |
e3 |
30 |
260 |
107 pF |
MIL-STD-202 |
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|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
2 |
45 A |
9.8 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.035 ohm |
7.2 A |
DUAL |
S-PDSO-F8 |
1 |
e3 |
30 |
260 |
57 pF |
MIL-STD-202 |
|||||||||||||||||||
|
|
Texas Instruments |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
67 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
DUAL |
S-PDSO-N6 |
1 |
SOURCE |
AVALANCHE RATED |
e3 |
30 |
260 |
200 pF |
||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.47 W |
UNSPECIFIED |
SWITCHING |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4787 ns |
-55 Cel |
10255 ns |
NICKEL PALLADIUM GOLD |
BOTTOM |
R-XBCC-N6 |
SOURCE |
ESD PROTECTED |
e4 |
260 |
297 pF |
|||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.76 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
45 A |
8 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.023 ohm |
5.2 A |
DUAL |
S-PDSO-N8 |
DRAIN |
e4 |
30 |
260 |
38 pF |
MIL-STD-202 |
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|
|
Alpha & Omega Semiconductor |
N-CHANNEL AND P-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
27 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
30 A |
12 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
2 W |
175 Cel |
SILICON |
-55 Cel |
.03 ohm |
12 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
40 pF |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
69 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
69 A |
23 A |
22 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-40 Cel |
Matte Tin (Sn) - annealed |
.11 ohm |
23 A |
UPPER |
R-XUFM-X22 |
ISOLATED |
e3 |
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|
|
Alpha & Omega Semiconductor |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.75 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
130 A |
8 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.0042 ohm |
28 A |
BOTTOM |
R-XBCC-N8 |
SOURCE |
||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
UNSPECIFIED |
SWITCHING |
12 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
90 A |
6 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.01 ohm |
11.5 A |
BOTTOM |
R-XBCC-N6 |
1 |
e4 |
12 pF |
MIL-STD-202 |
||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.3 W |
UNSPECIFIED |
SWITCHING |
12 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
14 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.0034 ohm |
25.5 A |
BOTTOM |
R-XBCC-N14 |
e4 |
260 |
304 pF |
MIL-STD-202 |
||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.5 W |
UNSPECIFIED |
SWITCHING |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.0051 ohm |
BOTTOM |
R-XBCC-N8 |
160 pF |
MIL-STD-202 |
||||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.9 W |
UNSPECIFIED |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
4 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.05 ohm |
BOTTOM |
S-XBCC-N4 |
e4 |
54 pF |
MIL-STD-202 |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.9 W |
UNSPECIFIED |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
4 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.0226 ohm |
BOTTOM |
S-XBCC-N4 |
e4 |
107 pF |
MIL-STD-202 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.