SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 140

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
AO4614BL	Alpha & Omega Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON	-55 Cel		.03 ohm	6 A	DUAL	R-PDSO-G8									43 pF
NTMD5838NLR2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	35 A	20 mJ	8.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.0308 ohm	7.4 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
NVMFD5877NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	10.5 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260
NVMFD5877NLT3G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	10.5 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260
STL65DN3LLH5	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	76 A	270 mJ	65 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.0079 ohm	19 A	DUAL	R-PDSO-N6	1	DRAIN				e3	30	260
TT8J11TCR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.043 ohm	3.5 A	DUAL	R-PDSO-F8	1						10	260
TT8J13TCR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	5 A		2.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.062 ohm	2.5 A	DUAL	R-PDSO-F8	1						10	260
IRF7350TRPBF	International Rectifier	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	8.4 A	35 mJ	2.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.21 ohm	2.1 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY	MS-012AA	e3	30	260
QJD1210011	Powerex	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	250 A			20	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON CARBIDE			.025 ohm	100 A	UPPER	R-PUFM-X20		ISOLATED					NOT SPECIFIED	NOT SPECIFIED
NVMFD5852NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	27 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	329 A	80 mJ	44 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.012 ohm	15 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5853NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	24 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	165 A	40 mJ	34 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.015 ohm	12 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMD6N03R2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	325 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		Tin (Sn)	.032 ohm	6 A	DUAL	R-PDSO-G8	1			ULTRA LOW ON RESISTANCE		e3	30	260		AEC-Q101
NVMFD5873NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	190 A	40 mJ	58 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.013 ohm	10 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
STL20DN10F7	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	20 A		20 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.067 ohm	12.3 A	DUAL	R-PDSO-F6		DRAIN					NOT SPECIFIED	NOT SPECIFIED
NVMFD5852NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	27 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	329 A	80 mJ	44 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.012 ohm	15 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5853NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	24 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	165 A	40 mJ	34 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.015 ohm	12 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5873NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	190 A	40 mJ	58 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN	.013 ohm	10 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5877NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	40 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5877NLWFT3G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	40 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
DMC4028SSDQ-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.16 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	27.3 A		7.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.028 ohm	5.4 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
BSO615NGHUMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10.4 A	60 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.15 ohm	2.6 A	DUAL	R-PDSO-G8	3		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3
BSO615CGHUMA1	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12.4 A	47 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.11 ohm	3.1 A	DUAL	R-PDSO-G8	3		Not Qualified	AVALANCHE RATED		e3
BSO207PHXUMA1	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	22.8 A	44 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	.045 ohm	5 A	DUAL	R-PDSO-G8	3		Not Qualified			e3
BSO330N02KGFUMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	26 A	19 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.03 ohm	4.2 A	DUAL	R-PDSO-G8			Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
BSC072N03LDGATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	90 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.0094 ohm	11.5 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3
BSC750N10NDGATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	52 A	17 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.075 ohm	3.2 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3
BSO303PHXUMA1	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32.8 A	97 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.021 ohm	7 A	DUAL	R-PDSO-G8	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
BSO211PHXUMA1	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18.4 A	28 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.067 ohm	3.2 A	DUAL	R-PDSO-G8	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
HTMN5130SSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	8 A	89 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.13 ohm	2.6 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
IPG20N04S412ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	80 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	.0122 ohm	20 A	DUAL	R-PDSO-F8	1					e3
IPG20N06S415ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	90 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			.0155 ohm	20 A	DUAL	R-PDSO-F8	1
IPG20N06S4L14ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	90 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			.0137 ohm	20 A	DUAL	R-PDSO-F8	1			LOGIC LEVEL COMPATIBLE
BSO612CVGHUMA1	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	47 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		NICKEL PALLADIUM GOLD SILVER	.12 ohm	3 A	DUAL	R-PDSO-G8	3			AVALANCHE RATED		e4				AEC-Q101
DMP2066LSD-13	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.04 ohm	5.8 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
ZXMN2AMCTA	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.45 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	13 A		3.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL PALLADIUM GOLD	.12 ohm	2.9 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	HIGH RELIABILITY		e4	30	260
ZXMN3AMCTA	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.45 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	13 A		2.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL PALLADIUM GOLD	.12 ohm	2.9 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	HIGH RELIABILITY		e4	30	260
STS3DNE60L	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL PALLADIUM GOLD	.1 ohm	3 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e4
BSO215C	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14.8 A	26 mJ	3.7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.1 ohm	3.7 A	DUAL	R-PDSO-G8			Not Qualified	LOGIC LEVEL		e0
BSO612CV	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	47 mJ	3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.12 ohm	3 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED		e0		235
STS5DNF20V	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Nickel/Palladium/Gold (Ni/Pd/Au)	.045 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
DMC3018LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A		9.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.02 ohm	9.1 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
NTLJD3119CTAG	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.3 W	PLASTIC/EPOXY		20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	18 A		3.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.065 ohm	2.6 A	DUAL	S-PDSO-N6	1		Not Qualified			e3		260
STC5DNF30V	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL PALLADIUM GOLD	.04 ohm	4.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
STS9D8NH3LL	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A	150 mJ	9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL PALLADIUM GOLD	.025 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	40	260
STS4DNF60	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.09 ohm	4 A	DUAL	R-PDSO-G8			Not Qualified	LOW THRESHOLD			NOT SPECIFIED	NOT SPECIFIED
STS2DPF80	STMicroelectronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	8 A		2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.25 ohm	2 A	DUAL	R-PDSO-G8			Not Qualified
IRF7341QTRPBF	International Rectifier	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	42 A	140 mJ	5.1 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.05 ohm	5.1 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	MS-012AA	e3	30	260
NTMD6N04R2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	29 A	245 mJ	5.8 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Tin (Sn)	.034 ohm	4.6 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.