SINGLE WITH BUILT-IN DIODE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STB4NK60Z-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

120 mJ

4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

4 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

NTD60N02RT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 mJ

32 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0105 ohm

32 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

235

NTD60N02R

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 mJ

32 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0105 ohm

32 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

IPB03N03LA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

385 A

960 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0041 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e0

220

IPB04N03LA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

107 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

385 A

290 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0064 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IPB09N03LA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

350 A

75 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0151 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e0

220

IPI04N03LA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

107 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

385 A

290 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0067 ohm

80 A

SINGLE

R-PSIP-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-262AA

e3

IPP03N03LA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

385 A

960 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0044 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPP04N03LA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

107 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

385 A

290 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0067 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

SPB80N10L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.024 ohm

80 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-263AB

e0

220

SPI80N10L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.024 ohm

80 A

SINGLE

R-PSIP-T3

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-262AA

e3

SPP80N10L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.024 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-220AB

e3

SPU30N03S2L-10

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

82 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

150 mJ

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0146 ohm

30 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-251

e3

STB6NK60Z-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

210 mJ

6 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

1.2 ohm

6 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

STE70NM60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

280 A

1400 mJ

70 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.055 ohm

70 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NTHS2101PT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

UNSPECIFIED

SWITCHING

8 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

7.5 A

5.4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.025 ohm

5.4 A

DUAL

R-XDSO-C8

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTMSD6N303R2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

325 mJ

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.032 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

e0

235

NTD25P03L1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

200 mJ

25 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.08 ohm

25 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

NTD25P03LT4

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

75 A

200 mJ

25 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.08 ohm

25 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTY100N10

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

313 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

369 A

500 mJ

123 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.01 ohm

123 A

SINGLE

R-PSIP-T3

Not Qualified

TO-264AA

e0

235

STB3NK60ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9.6 A

150 mJ

2.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

3.6 ohm

2.4 A

SINGLE

R-PSSO-G2

1

Not Qualified

e3

30

245

NTB125N02RT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113.6 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

120 mJ

15.9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0062 ohm

95 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-220AB

e0

235

NTB125N02R

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113.6 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

120 mJ

15.9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0062 ohm

95 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTD23N03R

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22.3 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

3.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

3.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTD85N02RT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78.1 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

192 A

85 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0052 ohm

85 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTD85N02R

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78.1 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

192 A

85 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0052 ohm

85 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTMS4101PR2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.38 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

6.9 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.019 ohm

6.9 A

DUAL

R-PDSO-G8

Not Qualified

e0

235

NTB23N03R

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

6 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTB75N03RT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

74.4 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

71.7 mJ

9.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.013 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTD110N02RT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

92.5 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

120 mJ

32 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0062 ohm

12.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTD110N02R

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

92.5 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

120 mJ

32 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0062 ohm

12.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTD14N03R

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20.8 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

11.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

11.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTD40N03RT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41.7 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

32 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.023 ohm

32 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

FQA9N90C

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

900 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.4 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

e3

NTD14N03RT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20.8 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

11.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

11.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

STD50NH02L-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

PLASTIC/EPOXY

SWITCHING

24 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

280 mJ

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0105 ohm

50 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

LOW THRESHOLD

TO-251

NOT SPECIFIED

260

STB60NH02LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

280 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0105 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

CSD17556Q5BT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

214 A

500 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0018 ohm

34 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

88 pF

CSD17559Q5T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

541 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0015 ohm

40 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

113 pF

FQP13N50C

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

860 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.48 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NTB25P06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

600 mJ

25 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.082 ohm

27.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

STW220NF75

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

2500 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0044 ohm

120 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

STB100NH02LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

600 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.006 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOW THRESHOLD

TO-263AB

e3

STP45NF3LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

241 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.02 ohm

45 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STB32N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

650 mJ

24 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.119 ohm

24 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE ENERGY RATED

TO-263AB

e3

30

245

STB6NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18.4 A

65 mJ

4.6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.92 ohm

4.6 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE ENERGY RATED

TO-263AB

e3

30

245

STD95N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

150 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.007 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

STE140NF20D

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

560 A

800 mJ

140 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.012 ohm

140 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE ENERGY RATED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.