110 W Power Field Effect Transistors (FET) 69

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
STP16N60M2	STMicroelectronics	N-CHANNEL	SINGLE	NO	110 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					12 A
STU16N60M2	STMicroelectronics	N-CHANNEL	SINGLE	NO	110 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					12 A
STL52N25M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	250 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	112 A	230 mJ	28 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.076 ohm	4.2 A	DUAL	R-PDSO-F5	1	DRAIN		ULTRA LOW-ON RESISTANCE				225
STB155N3H6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	525 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.003 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN		ULTRA-LOW RESISTANCE	TO-263AB		NOT SPECIFIED	NOT SPECIFIED
STD155N3H6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	525 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.003 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN		ULTRA-LOW RESISTANCE	TO-252		NOT SPECIFIED	NOT SPECIFIED
STB95N4F3	STMicroelectronics	N-CHANNEL	SINGLE	YES	110 W							1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			MATTE TIN		80 A			1					e3	30	245
STI18N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	210 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.22 ohm	15 A	SINGLE	R-PSIP-T3		DRAIN			TO-262AA
STP7N80K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	88 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn)	1.2 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB	e3
STP80N70F6	STMicroelectronics	N-CHANNEL	SINGLE	NO	110 W							1			96 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel					96 A
IRFR6215TR	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	310 mJ	13 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Tin/Lead (Sn/Pb)	.295 ohm	13 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e0	30	240
STB155N3LH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	525 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.004 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252	e3	30	245
IRFR13N20DTRL	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	130 mJ	13 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Tin/Lead (Sn/Pb)	.235 ohm	13 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e0	30	240
IRFR13N20DTR	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	130 mJ	13 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Tin/Lead (Sn/Pb)	.235 ohm	13 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e0	30	240
STP150N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	525 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0049 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
STB11NM60-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	350 mJ	11 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn)	.45 ohm	11 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
STB20NM50-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	650 mJ	20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.25 ohm	20 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
STB85NF3LLT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	340 A		85 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.0095 ohm	85 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3	30	245
STH80N10F7-2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A		80 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0095 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN		ULTRA LOW-ON RESISTANCE
STP80N10F7	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A		80 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.01 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN		ULTRA LOW-ON RESISTANCE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STB60N55F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	390 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.0085 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
STD60N55F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	390 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0085 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STP60N55F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	390 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0085 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
STP95N4F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn)	.0062 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
STU60N55F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	390 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0085 ohm	80 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251	e3	30	260
STU95N4F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.065 ohm	80 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
STD100N3LF3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	500 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0055 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
STD90N4F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0065 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
STP90N4F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0062 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STU90N4F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0062 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
STI90N4F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn)	.0062 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA	e3
IRFZ44N,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	110 mJ	49 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.022 ohm	49 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified	ESD PROTECTED	TO-220AB	e3
SIHFR430ATR-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	1.7 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SIHFR430ATRL-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	1.7 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SIHFR430ATRR-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	1.7 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STP11NM60A	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A		11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.45 ohm	11 A	SINGLE	R-PSFM-T3	1		Not Qualified		TO-220AB	e3
STB9NK50ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28.8 A	190 mJ	7.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.85 ohm	7.2 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3	30	245
STP62NS04Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	33 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	248 A	500 mJ	40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn)	.015 ohm	62 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
STD150N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	525 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.0045 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
NTD110N02R-001G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	120 mJ	32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0062 ohm	12.5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3		260
NTD110N02R-001	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	120 mJ	32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.0062 ohm	12.5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0		235
STP6NK70Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	200 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	1.8 ohm	5 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
STD100N03LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	500 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn)	.0055 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-251AA	e3
STD95N04	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn)	.0065 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
IRF5305LPBF	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	280 mJ	31 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - with Nickel (Ni) barrier	.06 ohm	31 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY	TO-262AA	e3	30	260
STP95N04	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn)	.0065 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
STD70NS04ZL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	33 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	650 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.0125 ohm	70 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260
STD120N4F6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	394 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.004 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STP120N4F6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	394 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0043 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.