136 W Power Field Effect Transistors (FET) 23

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STL70N10F3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

64 A

770 mJ

82 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0084 ohm

58 A

DUAL

R-PDSO-F5

DRAIN

NVB6413ANT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

178 A

200 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.028 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

IPD110N12N3GBUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

120 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

120 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.011 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

IPS110N12N3GBKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

120 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.011 ohm

75 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251

e3

IPB067N08N3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

150 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0067 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

STP90N6F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

136 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

IPD30N06S2-15

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

240 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0147 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

40

260

IPD30N06S2L-13

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

240 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.017 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

e3

IPP80N04S3-04

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

290 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0042 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

ULTRA LOW RESISTANCE

TO-220AB

e3

260

PHD34NQ10T,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

170 mJ

35 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.04 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

NTB6413ANG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

178 A

200 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.028 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

IPI070N08N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

150 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0067 ohm

80 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

260

IPP070N08N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

150 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.007 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

BUK9618-55A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

246 A

127 mJ

61 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.019 ohm

61 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

SPD50N03S2-07G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

250 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0073 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-252AA

e3

260

IPB80N06S3L-06

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

250 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0056 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263

e3

245

IPP80N06S3L-06

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

250 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0059 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

DMT3002LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

700 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0025 ohm

240 A

DUAL

R-PDSO-F8

DRAIN

e3

260

300 pF

MIL-STD-202

DMTH6004SCT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.00365 ohm

100 A

SINGLE

R-PSFM-T3

TO-220AB

e3

260

105 pF

MIL-STD-202

DMTH10H4M5LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

240 mJ

100 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.043 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

e3

260

25.5 pF

C3M0075120D-A

Wolfspeed

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.09 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

2 pF

DMTH10H4M5LPSWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

428 A

240 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0049 ohm

107 A

DUAL

R-PDSO-F8

1

DRAIN

e3

25.5 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH10H4M5LPSW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

428 A

240 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0049 ohm

107 A

DUAL

R-PDSO-F8

1

DRAIN

e3

25.5 pF

MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.