| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
300 mJ |
58 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0182 ohm |
58 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
150 mJ |
90 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0029 ohm |
90 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
167 W |
1 |
315 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Matte Tin (Sn) - annealed |
315 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
706 mJ |
315 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.0013 ohm |
315 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
167 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
706 mJ |
330 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0012 ohm |
330 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
116 pF |
AEC-Q101 |
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|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
167 W |
1 |
339 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Matte Tin (Sn) - annealed |
339 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
167 W |
1 |
235 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Matte Tin (Sn) - annealed |
235 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
167 W |
1 |
235 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Matte Tin (Sn) - annealed |
235 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
167 W |
1 |
235 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Matte Tin (Sn) - annealed |
235 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
167 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
392 A |
254 mJ |
98 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.008 ohm |
98 A |
SINGLE |
R-PSFM-T3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e3 |
|||||||||||||||||||
|
|
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
416 A |
340 mJ |
104 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - with Nickel (Ni) barrier |
.008 ohm |
104 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
|||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
258 A |
1000 mJ |
136 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0045 ohm |
136 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
300 mJ |
58 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0182 ohm |
58 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
167 W |
PLASTIC/EPOXY |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
300 mJ |
58 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0182 ohm |
58 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
380 A |
262 mJ |
95 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0082 ohm |
95 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
245 |
||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
SWITCHING |
85 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
380 A |
262 mJ |
95 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0082 ohm |
95 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
245 |
||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
167 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
380 A |
262 mJ |
95 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0085 ohm |
95 A |
SINGLE |
R-PSFM-T3 |
1 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
167 W |
PLASTIC/EPOXY |
SWITCHING |
85 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
380 A |
262 mJ |
95 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
95 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
167 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
360 A |
165 mJ |
90 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0037 ohm |
90 A |
SINGLE |
R-PSIP-T3 |
LOGIC LEVEL COMPATIBLE |
TO-262AA |
|||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
706 mJ |
330 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0012 ohm |
330 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
706 mJ |
330 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0012 ohm |
330 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
706 mJ |
330 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0012 ohm |
330 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
451 mJ |
250 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0023 ohm |
250 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
706 mJ |
330 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0012 ohm |
330 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
116 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
451 mJ |
250 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0023 ohm |
250 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
40 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
706 mJ |
330 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0012 ohm |
330 A |
DUAL |
R-PDSO-X5 |
1 |
DRAIN |
e3 |
30 |
260 |
77 pF |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
820 A |
662 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0033 ohm |
205 A |
DUAL |
R-PDSO-F8 |
DRAIN |
e3 |
260 |
179 pF |
MIL-STD-202 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.