2.5 W Power Field Effect Transistors (FET) 55

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
BLF6G22S-45,112	NXP Semiconductors	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel
IRF7807VD2TRPBF	International Rectifier	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			8.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			MATTE TIN		8.3 A			1					e3	30	260
UPA2735GR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			16 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					16 A									NOT SPECIFIED	NOT SPECIFIED
UPA2736GR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			14 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					14 A									NOT SPECIFIED	NOT SPECIFIED
UPA2737GR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			11 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					11 A									NOT SPECIFIED	NOT SPECIFIED
UPA2738GR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			10 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					10 A									NOT SPECIFIED	NOT SPECIFIED
NDT01N60T1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.5 A	13 mJ	.4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	8.5 ohm	.4 A	DUAL	R-PDSO-G4	1	DRAIN			TO-261AA	e3	30	260
UPA2630T1R-E2-AX	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			7 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			NICKEL PALLADIUM GOLD		7 A								e4		260
UPA2631T1R-E2-AX	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			6 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			NICKEL PALLADIUM GOLD		6 A								e4		260
CSD15571Q2	Texas Instruments	N-CHANNEL	SINGLE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	52 A	18 mJ	22 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	NICKEL PALLADIUM GOLD	.0192 ohm	10 A	DUAL	S-PDSO-N6	1	DRAIN		AVALANCHE RATED		e4	30	260	42 pF
IRF7413A	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	58 A	260 mJ	11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.0135 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY	MS-012AA	e0
STN2NE10L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A	20 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.45 ohm	1.8 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOW THRESHOLD		e3
STN2NE10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	20 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.4 ohm	2 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3
STS12NF30L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A		12 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Nickel/Palladium/Gold (Ni/Pd/Au)	.011 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e4	30	260
STS11NF30L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A		11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.019 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified			e3		260
BSO613SPV	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13.8 A	150 mJ	3.44 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.13 ohm	3.44 A	DUAL	R-PDSO-G8	1		Not Qualified			e0		235
STQ3N45K3-AP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2.5 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1	2.4 A		.6 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	3.8 ohm	.6 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
STS9NF30L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A		9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.035 ohm	9 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	40	260
DMN3052LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7.1 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.03 ohm	7.1 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMC3018LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A		9.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.02 ohm	9.1 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
STN5PF02V	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A		4.2 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.1 ohm	4.2 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3
STS2DPF80	STMicroelectronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	8 A		2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.25 ohm	2 A	DUAL	R-PDSO-G8			Not Qualified
IRF7413QTRPBF	International Rectifier	N-CHANNEL	SINGLE	YES	2.5 W							1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					13 A
IRF7495TR	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	58 A	180 mJ	7.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin/Lead (Sn/Pb)	.022 ohm	7.3 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA	e0	30	245
DMN3007LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A		16 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.007 ohm	16 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
IRF7493TR	International Rectifier	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			9.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN LEAD		9.3 A			1					e0
IRF7831TR	International Rectifier	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					21 A
DMC3036LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.036 ohm	6.9 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMP3035LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		12 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.016 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
STS5PF30L	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.075 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e4	40	260
BSO4410	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44.5 A	126 mJ	11.1 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.013 ohm	11.1 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
BSO4420	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	230 mJ	13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0078 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
BSO4822	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	51 A	165 mJ	12.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.01 ohm	12.7 A	DUAL	R-PDSO-G8	3		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
STS4NF100	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.07 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
STS6PF30L	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.042 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e4
STS7PF30L	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.028 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
DMN3031LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0185 ohm	9 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
STS5PF20V	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.1 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
STS9NH3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	100 mJ	9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.025 ohm	9 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
STS12NH3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A		12 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.013 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e4	40	260
SI4880DY-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		13 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0085 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
IRF7471PBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	83 A	300 mJ	10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.013 ohm	10 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF7471TRPBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	83 A	300 mJ	10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.013 ohm	10 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF7492PBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	130 mJ	3.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.079 ohm	3.7 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF7805APBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.011 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
MMSF3P02HDR2G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	567 mJ	5.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.075 ohm	5.6 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	40	260
STS5N15F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	300 mJ	5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.057 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
FDS4465_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		13.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0085 ohm	13.5 A	DUAL	R-PDSO-G8	1	DRAIN	Not Qualified			e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.