39 W Power Field Effect Transistors (FET) 15

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NVMFS5826NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

130 A

20 mJ

26 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.032 ohm

26 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVMFS5826NLT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

130 A

20 mJ

26 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.032 ohm

26 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NDF11N50ZH

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

420 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.52 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NDD02N40-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6.9 A

120 mJ

1.7 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0055 ohm

1.7 A

SINGLE

R-PSIP-T3

3

DRAIN

e3

30

260

NDD02N40T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.9 A

120 mJ

1.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0055 ohm

1.7 A

SINGLE

R-PSSO-G2

3

DRAIN

e3

30

260

NVMFS5826NLWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

39 W

1

26 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

26 A

1

e3

30

260

NVMFS5826NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

39 W

1

26 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

26 A

1

e3

30

260

NDF11N50ZG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

420 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.52 ohm

6.7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NDF10N60ZG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

300 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.75 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FCPF190N60E-F152

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

61.8 A

400 mJ

20.6 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

94 ns

-55 Cel

252 ns

Matte Tin (Sn) - annealed

.19 ohm

20.6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

165 pF

FCPF190N60E-F154

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

61.8 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

94 ns

-55 Cel

252 ns

Matte Tin (Sn) - annealed

.19 ohm

20.6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

165 pF

FCPF190N60-F154

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60.6 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

158 ns

Matte Tin (Sn) - annealed

.199 ohm

20.2 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

128 pF

CSD17507Q5AT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

163 A

45 mJ

65 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0161 ohm

65 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

30 pF

DMTH10H009LFG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

220 A

144.5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0085 ohm

14 A

DUAL

S-PDSO-N8

DRAIN

e3

260

16 pF

MIL-STD-202

DMTH10H009LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

220 A

144.5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0085 ohm

14 A

DUAL

S-PDSO-N8

DRAIN

e3

260

16 pF

MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.