40 W Power Field Effect Transistors (FET) 48

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SEF120	STMicroelectronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							8 A
TK16A60W5,S4VX	Toshiba	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			15.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							15.8 A
STF34NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	116 A	345 mJ	29 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.11 ohm	29 A	SINGLE	R-PSFM-T3		ISOLATED		ULTRA-LOW RESISTANCE	TO-220AB	e3
NVD5806NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	67 A	39 mJ	33 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.019 ohm	33 A	SINGLE	R-PSSO-G2	1	DRAIN				e3				AEC-Q101
STFI13N95K3	STMicroelectronics	N-CHANNEL	SINGLE	NO	40 W							1			10 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel							10 A
STF12NK80Z	STMicroelectronics	N-CHANNEL	SINGLE	NO	40 W							1			10.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		10.5 A								e3
STF25N80K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	78 A	200 mJ	19.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.26 ohm	19.5 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
RCX300N20	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	396 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN SILVER COPPER	.0427 ohm	70 A	SINGLE	R-PSFM-T3	1	ISOLATED			TO-220AB	e1	10	260
ZDX080N50	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A		8 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.85 ohm	8 A	SINGLE	R-PSFM-T3	1	ISOLATED			TO-220AB		10	260
IPD50R800CEBTMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15.5 A	83 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.8 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
BFL4007-1E	Onsemi	N-CHANNEL	SINGLE	NO	40 W							1			8.7 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		8.7 A								e3
BFL4037-1E	Onsemi	N-CHANNEL	SINGLE	NO	40 W							1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		11 A								e3
VNP35N07FI	STMicroelectronics	N-CHANNEL	COMPLEX	NO	40 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON	800 ns		1350 ns	MATTE TIN	.035 ohm		SINGLE	R-PSFM-T3					TO-220AB
IRF640FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	280 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.18 ohm	18 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STD30NF03LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	100 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - annealed	.035 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD	TO-252	e3	30	260
STD10PF06T4	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	125 mJ	10 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn)	.2 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
STF16NK60Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	360 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.42 ohm	14 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STF20NM65N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	115 mJ	19 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.27 ohm	15 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3
BUZ73AH	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	120 mJ		3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.6 ohm	5.5 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STF25NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	850 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.16 ohm	21 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STF30NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	900 mJ	25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.385 ohm	25 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
STF30NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	900 mJ	25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.13 ohm	25 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STF24NM65N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	76 A	500 mJ	19 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.19 ohm	19 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STP16NS25FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	600 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.28 ohm	16 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STD10PF06-1	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	125 mJ	10 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.2 ohm	10 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3
STP15NK50ZFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	300 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-50 Cel		MATTE TIN	.34 ohm	14 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH VOLTAGE	TO-220AB	e3
STD38NH02LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	152 A	250 mJ	38 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0135 ohm	38 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD	TO-252AA	e3
STD38NH02L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	152 A	250 mJ	38 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0135 ohm	38 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD	TO-251
STF17N62K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	315 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.38 ohm	15 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE ENERGY RATED	TO-220AB	e3
STF42N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	132 A	950 mJ	33 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.079 ohm	33 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STF30NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	108 A	900 mJ	27 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.115 ohm	27 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STF35N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	108 A	800 mJ	27 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.098 ohm	27 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
MTP10N10ELG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	50 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.22 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
MTD5P06VT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	125 mJ	5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.45 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	40	260
MLD1N06CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	YES	40 W	PLASTIC/EPOXY	SWITCHING	59 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.8 A	80 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.75 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260
STF20NK50Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	850 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.27 ohm	17 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STF25NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	88 A	350 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.14 ohm	22 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
NTD5806NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	65 A	38 mJ	33 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.019 ohm	33 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
MLD2N06CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	YES	40 W	PLASTIC/EPOXY	SWITCHING	58 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		80 mJ		2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.4 ohm	2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION		e3	40	260
STF40N20	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	230 mJ	40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.045 ohm	40 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STFV4N150	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	1500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	350 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					7 ohm	4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
STF34NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	116 A	345 mJ	29 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.105 ohm	29 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
DMN90H2D2HCTI	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	360 mJ	6 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	2.2 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3		260
NTD5C464NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	136 mJ	59 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0058 ohm	59 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
FDMC4D9P20X8	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	335 A	54 mJ	75 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	54 ns	-55 Cel	781 ns	Matte Tin (Sn) - annealed	.0049 ohm	75 A	DUAL	S-PDSO-N8	1	DRAIN			MO-240BA	e3	30	260	1455 pF
2SK3798(STA4,Q,M)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	345 mJ	4 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON					3.5 ohm	4 A	SINGLE	R-PSFM-T3
TK5A90E,S4X	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	13.5 A	202 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					3.1 ohm	4.5 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		30	260	8 pF
DMN10H220LDV-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	2	42 A	1.1 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.222 ohm	10.5 A	DUAL	S-PDSO-F8		DRAIN				e3		260	12 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.