50 W Power Field Effect Transistors (FET) 70

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
AOTF9N70	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	154 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			1.2 ohm	9 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				11 pF
PSMN9R0-30LL,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							21 A
2SK3466(TE24L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A
2SK3816-DL-E	Onsemi	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		40 A			1					e6
2SK3820-DL-E	Onsemi	N-CHANNEL	SINGLE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	104 A	84.5 mJ	26 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.65 W	150 Cel	SILICON				Tin/Bismuth (Sn/Bi)	.08 ohm	26 A	SINGLE	R-PSIP-T3	1					e6			110 pF
FQD3P50TM_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.4 A	250 mJ	2.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	4.9 ohm	2.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STD65N3LLH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A		65 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0097 ohm	65 A	SINGLE	R-PSSO-G2		DRAIN		ULTRA-LOW RESISTANCE	TO-252		NOT SPECIFIED	NOT SPECIFIED
STU65N3LLH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A		65 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0097 ohm	65 A	SINGLE	R-PSIP-T3		DRAIN		ULTRA-LOW RESISTANCE	TO-251		NOT SPECIFIED	NOT SPECIFIED
NVD4810NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	98 mJ	54 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0157 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
STD30NF04LT	STMicroelectronics	N-CHANNEL	SINGLE	YES	50 W							1			30 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel					MATTE TIN		30 A			1					e3		260
STL11N4LLF5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	44 A		11 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.012 ohm	11 A	DUAL	S-PDSO-N8		DRAIN
2SK3820-DL-1E	Onsemi	N-CHANNEL	SINGLE	YES	50 W							1			26 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		26 A			1					e3
STP25N10F7	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.035 ohm	25 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	19 pF
STD5N20T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.8 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
STD5NM50T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	300 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.8 ohm	7.5 A	SINGLE	R-PSSO-G2			Not Qualified	AVALANCHE RATED	TO-252AA	e3
STP80NF55-06FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	1300 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0065 ohm	60 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
SPD04N60S5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	130 mJ	4.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.95 ohm	4.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-252AA	e3		260
STD4NS25T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	120 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.1 ohm	4 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3
STL9N3LLH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	36 A		9 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.022 ohm	9 A	DUAL	S-XDSO-N5	1	DRAIN	Not Qualified			e3	30	260
NTD4860N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	84.5 mJ	65 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0111 ohm	10.4 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3
NTD4860NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	84.5 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0111 ohm	10.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
SIR890DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A	80 mJ	50 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.004 ohm	30 A	DUAL	R-PDSO-C5			Not Qualified			e3
STL15N3LLH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	60 A		15 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.007 ohm	15 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3	30	260
SPD26N06S2L-35	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	80 mJ	26 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.047 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252	e0
SPD04N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13.5 A	130 mJ	4.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.95 ohm	4.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3
SPD25N06S2-40	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	116 A	80 mJ	25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.04 ohm	29 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e0
STD3NM60-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	200 mJ	3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.5 ohm	3 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251	e3
STD3NM60T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	200 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.5 ohm	3 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3
STD35NF3LLT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	300 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0215 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD	TO-252AA	e3	30	260
SPB10N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	41.2 A	60 mJ	10.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.17 ohm	10.3 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e0		220
SPD11N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	41.2 A	60 mJ	10.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.17 ohm	10.5 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3		260
SPI10N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	41.2 A	60 mJ	10.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	81 ns	-55 Cel	79 ns	MATTE TIN	.17 ohm	10.3 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-262AA	e3			65 pF
SPP10N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	41.2 A	60 mJ	10.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	81 ns	-55 Cel	79 ns	MATTE TIN	.17 ohm	10.3 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3			65 pF
SPU11N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	41.2 A	60 mJ	10.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.17 ohm	10.5 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-251	e3
FQD19N10LTF	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	62.4 A	220 mJ	15.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.11 ohm	15.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
FQD2N80TF	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A	180 mJ	1.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	6.3 ohm	1.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
STP7NK30Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.9 ohm	5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
MTD6N20ET4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	54 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.7 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
STL8NH3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	32 A		8 A	9	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.017 ohm	8 A	QUAD	S-XQFP-N9	1	DRAIN	Not Qualified	LOW THRESHOLD		e3	30	260
STD7NK30Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.9 ohm	5 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA
SPP10N10L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42.2 A	60 mJ	10.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.21 ohm	10.3 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
IPI25N06S3L-22	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	120 mJ	25 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0216 ohm	25 A	SINGLE	R-PSIP-T3	1		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-262AA	e3		260
IPP25N06S3L-22	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	120 mJ	25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0216 ohm	25 A	SINGLE	R-PSFM-T3	1		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
STSJ50NH3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	150 mJ	50 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.013 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e4
NTD4810NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	98 mJ	54 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0157 ohm	8.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
FQD12P10TM_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	37.6 A	370 mJ	9.4 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.29 ohm	9.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260		AEC-Q101
STL60N32N3LL	STMicroelectronics	N-CHANNEL	SERIES, 2 ELEMENTS	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	48 A		60 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.12 ohm	32 A	DUAL	R-PDSO-N4	3	DRAIN	Not Qualified			e3	30	260
STL17N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	68 A		17 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0073 ohm	17 A	DUAL	S-XDSO-N8		DRAIN	Not Qualified	ULTRA-LOW RESISTANCE			NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.