500 W Power Field Effect Transistors (FET) 12

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BLF888,112

NXP Semiconductors

N-CHANNEL

500 W

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

30

260

AOB290L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

YES

500 W

ENHANCEMENT MODE

1

140 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

140 A

IPW65R041CFDFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

255 A

2185 mJ

68.5 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.041 ohm

68.5 A

SINGLE

R-PSFM-T3

TO-247

e3

STE110NS20FD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

UNSPECIFIED

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

440 A

750 mJ

110 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.024 ohm

110 A

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

STE250NS10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

UNSPECIFIED

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

880 A

800 mJ

220 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0055 ohm

220 A

UPPER

R-XUFM-X4

NOT APPLICABLE

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STW220NF75

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

2500 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0044 ohm

120 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

STE140NF20D

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

560 A

800 mJ

140 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.012 ohm

140 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE ENERGY RATED

NVH4L018N075SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

750 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

483 A

162 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

.018 ohm

140 A

SINGLE

R-PSFM-T4

1

TO-247

e3

30

260

31 pF

AEC-Q101

PCFA86210F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

500 W

UNSPECIFIED

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

502 mJ

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0063 ohm

169 A

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

16 pF

AEC-Q101

NTHL033N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

175 A

1250 mJ

70 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.033 ohm

70 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

IRL40T209ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

500 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1200 A

875 mJ

300 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.00072 ohm

300 A

SINGLE

R-PSSO-F8

1

DRAIN

e3

LSIC1MO120G0025

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.032 ohm

100 A

SINGLE

R-PSFM-T4

DRAIN

ULTRA LOW RESISTANCE

TO-247AD

14 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.