65 W Power Field Effect Transistors (FET) 17

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
PSMN014-60LS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	65 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							40 A
PSMN035-100LS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	65 W						ENHANCEMENT MODE	1			27 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							27 A
PSMN023-80LS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	65 W						ENHANCEMENT MODE	1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							34 A
PSMN7R0-40LS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	65 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							40 A
2SK3817-DL-E	Onsemi	N-CHANNEL	SINGLE	YES	65 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Bismuth (Sn/Bi)		60 A			1					e6
NTDV20P06LT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	200 ns	-55 Cel	185 ns	MATTE TIN	.15 ohm	15.5 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	120 pF	AEC-Q101
FDB7030BLS	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		56 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	100 Cel	SILICON				Tin/Lead (Sn85Pb15)	.0105 ohm	56 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e0
IPB45N06S3-16	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	95 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0154 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
IPB45N06S3L-13	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	95 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0131 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3		245
IPP45N06S3L-13	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	65 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	95 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0134 ohm	45 A	SINGLE	R-PSFM-T3	1		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3		260
PHP45N03LTA,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	65 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	40 mJ	40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.024 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
FQB13N10TM	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	51.2 A	95 mJ	12.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.18 ohm	12.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
FDD8447L_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		40 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0085 ohm		SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260		AEC-Q101
FDD120AN15A0-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		122 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.12 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260		AEC-Q101
NTP8G202NG	Onsemi	N-CHANNEL	SINGLE	NO	65 W							1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		9 A								e3	30	260
NTDV20P06LT4G-VF01	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15.5 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	200 ns	-55 Cel	185 ns	MATTE TIN	.15 ohm	15.5 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	120 pF	AEC-Q101
DMTH8028LPSW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	166.8 A	23.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.025 ohm	41.7 A	DUAL	R-PDSO-F8		DRAIN							32 pF	MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.