83 W Power Field Effect Transistors (FET) 69

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
AOW4S60	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							4 A
AON6234	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	220 A	125 mJ	85 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.005 ohm	85 A	DUAL	R-PDSO-F8		DRAIN							77 pF
AON7242	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	255 A	115 mJ	50 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.0058 ohm	50 A	DUAL	S-PDSO-N8		DRAIN							70 pF
VNV28N04TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	83 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		28 A			3					e3	30	250
VNB28N04-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	83 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		28 A			3					e3	30	245
VNB28N04TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	83 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		28 A			3					e3	30	245
VNB20N07-E	STMicroelectronics	N-CHANNEL	COMPLEX	YES	83 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON	580 ns		1100 ns		.07 ohm		SINGLE	R-PSSO-G2					TO-263
AOD2N100	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE	YES	83 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							2 A
NVD6415ANLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	79 mJ	23 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.056 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	70 pF	AEC-Q101
NVD6415ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	89 A	79 mJ	23 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.055 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
UPA2739T1A-E2-AY	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A	160 mJ	85 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0028 ohm	85 A	DUAL	R-PDSO-N8		DRAIN				e3
UPA2764T1A-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	83 W							1			130 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		130 A								e3
UPA2765T1A-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	83 W							1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		100 A								e3
UPA2766T1A-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	83 W			30 V				1			130 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN	.00088 ohm	130 A								e3
SPI07N60S5HKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.6 ohm	7.3 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-262AA		NOT SPECIFIED	NOT SPECIFIED
SPP07N60S5HKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.6 ohm	7.3 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IPP50R399CPXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	215 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.399 ohm	9 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
IPP60R380E6XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	210 mJ	10.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.38 ohm	10.6 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NDD60N745U1-1G	Onsemi	N-CHANNEL	SINGLE	NO	83 W							1			6.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		6.8 A			3					e3	30	260
NTMFS4H02NFT3G	Onsemi	N-CHANNEL	SINGLE	YES	83 W							1			193 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		193 A			1					e3	30	260
NTMFS4H02NT1G	Onsemi	N-CHANNEL	SINGLE	YES	83 W							1			193 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		193 A			1					e3	30	260
NTMFS4H02NT3G	Onsemi	N-CHANNEL	SINGLE	YES	83 W							1			193 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		193 A			1					e3	30	260
SIR882DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	UNSPECIFIED	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	80 A	45 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0087 ohm	60 A	DUAL	R-XDSO-C5		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
VNB20N07	STMicroelectronics	N-CHANNEL	COMPLEX	YES	83 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON	580 ns		1100 ns	MATTE TIN	.07 ohm		SINGLE	R-PSSO-G2	1				TO-263	e3
SPP07N60S5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.6 ohm	7.3 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
NVMFS5C442NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	265 mJ	130 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0037 ohm	130 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	37 pF	AEC-Q101
NVMFS5C442NLT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	265 mJ	130 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0037 ohm	130 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	37 pF	AEC-Q101
NVMFS5C442NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	265 mJ	130 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0037 ohm	130 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	37 pF	AEC-Q101
NVMFS5C442NLWFT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	265 mJ	130 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0037 ohm	130 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	37 pF	AEC-Q101
SPD07N60S5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.6 ohm	7.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-252AA	e3		260
SPU07N60S5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.6 ohm	7.3 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-251AA	e3
IPD50R399CP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	215 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.399 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
NTD5803NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	228 A	240 mJ	76 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0072 ohm	76 A	DUAL	R-PDSO-G2	1	DRAIN	Not Qualified			e3	30	260
SPD30N06S2-23	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.023 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3
SPD07N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21.9 A	230 mJ	7.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.6 ohm	7.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3		260
IPB06N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	91 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.0095 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e0		220
IPI06N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	91 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0099 ohm	50 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-262AA	e3
IPP06N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	91 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0099 ohm	50 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IPU07N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	375 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.0101 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e0
VNB20N0713TR	STMicroelectronics	N-CHANNEL	COMPLEX	YES	83 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON	580 ns		1100 ns	MATTE TIN	.07 ohm		SINGLE	R-PSSO-G2	1				TO-263		30	245
IPD06N03LBG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	160 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0061 ohm	50 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252AA	e3		260
IPF06N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	50 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0094 ohm	50 A	SINGLE	R-PSSO-G3	3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3		260
IPS06N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0096 ohm	50 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e3
IPB06N03LB	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	164 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0063 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
NVD6495NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	79 mJ	25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.054 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NVD5803NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	228 A	240 mJ	85 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0057 ohm	85 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NDD04N60Z-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	120 mJ	4.1 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	2 ohm	2.6 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3
NDD04N60ZT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	120 mJ	4.1 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	2 ohm	2.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.