90 W Power Field Effect Transistors (FET) 52

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
2SK2917(F)	Toshiba	N-CHANNEL	SINGLE	NO	90 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				18 A
2SK2995(F)	Toshiba	N-CHANNEL	SINGLE	NO	90 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				30 A
2SK4066-DL-E	Onsemi	N-CHANNEL	SINGLE	YES	90 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Bismuth (Sn/Bi)		100 A			1					e6
2SK4065-DL-E	Onsemi	N-CHANNEL	SINGLE	YES	90 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Bismuth (Sn/Bi)		100 A			1					e6
STI16N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	200 mJ	12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn)	.279 ohm	12 A	SINGLE	R-PSIP-T3			Not Qualified	ULTRA-LOW RESISTANCE	TO-262AA	e3
STW16N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	200 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn)	.279 ohm	12 A	SINGLE	R-PSFM-T3			Not Qualified	ULTRA-LOW RESISTANCE	TO-247	e3
STB16N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	200 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.279 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN		ULTRA-LOW RESISTANCE	TO-263AB	e3	30	245
STI6N62K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	140 mJ	5.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn)	1.2 ohm	5.5 A	SINGLE	R-PSIP-T3				ULTRA LOW-ON RESISTANCE	TO-262AA	e3
STB18N55M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	550 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	200 mJ	13 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn) - annealed	.24 ohm	13 A	SINGLE	R-PSSO-G2	1			ULTRA-LOW RESISTANCE	TO-263AB	e3	30	245
STI13NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	200 mJ	11 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.36 ohm	11 A	SINGLE	R-PSIP-T3		DRAIN			TO-262AA		NOT SPECIFIED	NOT SPECIFIED
BBS3002-TL-1E	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	340 mJ	100 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.009 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245	950 pF
STL18N55M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	550 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	9.6 A	200 mJ	13 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.24 ohm	2.4 A	SINGLE	S-PSSO-N4	3	DRAIN	Not Qualified			e3	30	260
STP3NK100Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN	6 ohm	2.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STB12NM60N-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	200 mJ	10 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.41 ohm	10 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3	40	245
STB12NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	200 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.41 ohm	10 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3
STP12NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	200 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.41 ohm	10 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STW12NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	200 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN/TIN SILVER COPPER	.41 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247	e3/e1	NOT SPECIFIED	NOT SPECIFIED
STI17NF25	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	100 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.165 ohm	17 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3	40	245
STP16NF25	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	100 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN	.235 ohm	13 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
SPB21N10G	Infineon Technologies	N-CHANNEL	SINGLE	YES	90 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				21 A
STB11NM60N-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	200 mJ	10 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.45 ohm	10 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified		TO-262AA	e3
STB28NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	84 A	430 mJ	21 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.158 ohm	21 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245
STP28NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	430 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn)	.158 ohm	21 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STI11NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	200 mJ	10 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.45 ohm	10 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA		NOT SPECIFIED	NOT SPECIFIED
STU11NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	200 mJ	10 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.45 ohm	10 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251		NOT SPECIFIED	NOT SPECIFIED
STP6N62K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	140 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	1.2 ohm	5.5 A	SINGLE	R-PSFM-T3			Not Qualified	ULTRA LOW-ON RESISTANCE	TO-220AB	e3
STP7N52K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	525 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	25 A		6.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.98 ohm	6.3 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STD10NM65N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	300 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn) - annealed	.48 ohm	9 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
STP10NM65N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	300 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.48 ohm	9 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STU10NM65N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	300 mJ	9 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn) - annealed	.48 ohm	9 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251AA	e3	30	260
SPB21N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	84 A	130 mJ	21 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN LEAD	.08 ohm	21 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e0		220
SPP21N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	130 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN	.08 ohm	21 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
STD5NK60ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	220 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn) - annealed	1.6 ohm	5 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
STP3HNK90Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	200 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	4.2 ohm	3 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STP6NK50Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22.4 A	180 mJ	5.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	1.2 ohm	5.6 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STP16N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	200 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.279 ohm	12 A	SINGLE	R-PSFM-T3			Not Qualified	ULTRA-LOW RESISTANCE	TO-220AB	e3
STU16N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	200 mJ	12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.279 ohm	12 A	SINGLE	R-PSIP-T3	1		Not Qualified	ULTRA-LOW RESISTANCE	TO-251	e3	30	260
STD20N20T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	110 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn)	.125 ohm	18 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3
STP20N20	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	110 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.125 ohm	18 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
MTP23P06VG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	81 A	794 mJ	23 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN	.12 ohm	23 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3	30	260
STB13NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	200 mJ	11 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn) - annealed	.36 ohm	11 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245
STW13NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	200 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn)	.36 ohm	11 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3
STD14NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	18 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.32 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STD7N52DK3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	525 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	100 mJ	6.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	1.15 ohm	6 A	SINGLE	R-PSSO-G2	1		Not Qualified	ULTRA-LOW RESISTANCE	TO-252	e3	30	260
STP5N95K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	100 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	3.5 ohm	4 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STP7N52DK3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	525 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	100 mJ	6.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	1.15 ohm	6 A	SINGLE	R-PSFM-T3			Not Qualified	ULTRA-LOW RESISTANCE	TO-220AB	e3
STU5N95K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	100 mJ	4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn) - annealed	3.5 ohm	4 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251	e3	30	260
STD7NM80-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	240 mJ	6.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn) - annealed	1.05 ohm	6.5 A	SINGLE	R-PSIP-T3	1	ISOLATED	Not Qualified		TO-251	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.