94 W Power Field Effect Transistors (FET) 23

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IPB041N04NGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

60 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0041 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

IPP041N04NGXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

60 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0041 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPB034N03LGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

70 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0047 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IPP034N03LGXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

70 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0047 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPB039N04LGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

60 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0052 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IPP039N04LGXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

60 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0052 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPB05N03LA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

385 A

190 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0078 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e0

220

IPP05N03LA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

385 A

190 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0081 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPD05N03LAG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

350 A

300 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0084 ohm

50 A

SINGLE

R-PSSO-G2

3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252AA

e3

260

IPD05N03LBG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

420 A

120 mJ

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0048 ohm

90 A

SINGLE

R-PSSO-G2

3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252AA

e3

260

IPB05N03LB

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

136 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.005 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IPP05N03LBG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

136 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0053 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPP07N03LBG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

164 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0066 ohm

50 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPU06N03LBG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

160 mJ

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0063 ohm

50 A

SINGLE

R-PSIP-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-251

e3

IPI126N10N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

232 A

70 mJ

58 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0126 ohm

58 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IPS031N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

60 mJ

90 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.004 ohm

90 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-251

e3

NVMFS6B14NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

140 A

29 mJ

55 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS6B14NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

140 A

29 mJ

55 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS6B14NWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

140 A

29 mJ

55 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS6B14NWFT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

140 A

29 mJ

55 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

FDB86569_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

41 mJ

80 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

53 ns

-55 Cel

45 ns

MATTE TIN

.0056 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

FDB9409L-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

33.7 mJ

90 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

53 ns

-55 Cel

72 ns

MATTE TIN

.0047 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

FCP11N60N-F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32.4 A

201.7 mJ

10.8 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

65.4 ns

-55 Cel

124 ns

.299 ohm

10.8 A

SINGLE

R-PSFM-T3

TO-220AB

5 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.