Infineon Technologies Power Field Effect Transistors (FET) 1,625

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SN7002NE6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.36 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

1

260

SN7002WE6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

.23 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.23 A

SN7002WE6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

.23 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.23 A

1

260

BSS169E6906

Infineon Technologies

N-CHANNEL

SINGLE

YES

.36 W

DEPLETION MODE

1

.17 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.17 A

SPB21N10G

Infineon Technologies

N-CHANNEL

SINGLE

YES

90 W

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

21 A

IPB79CN10NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

17 mJ

13 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.079 ohm

13 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

BSP129L6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

240 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

1.4 A

.35 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.35 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

260

BTS282ZE-3180A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

PLASTIC/EPOXY

SWITCHING

49 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

2000 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0095 ohm

80 A

SINGLE

R-PSSO-G7

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

BTS282ZE-3230

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

NO

PLASTIC/EPOXY

SWITCHING

49 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

2000 mJ

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0095 ohm

80 A

SINGLE

R-PSFM-T7

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

IPI100P03P3L-04

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

450 mJ

100 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0043 ohm

100 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-262AA

e3

260

IPP04CN10NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

1000 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0042 ohm

100 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

IPP05CN10LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

826 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0051 ohm

100 A

SINGLE

R-PSFM-T3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPP06CN10LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

480 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0062 ohm

100 A

SINGLE

R-PSFM-T3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPP08CN10LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

392 A

254 mJ

98 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.008 ohm

98 A

SINGLE

R-PSFM-T3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPP100P03P3L-04

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

450 mJ

100 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0043 ohm

100 A

SINGLE

R-PSFM-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPW60R250CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

345 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.25 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

260

BSB019N03LXG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89 W

METAL

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

290 mJ

174 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0019 ohm

31 A

BOTTOM

R-MBCC-N3

3

DRAIN

Not Qualified

AVALANCHE RATED

e3

260

BUZ31LH

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

95 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54 A

200 mJ

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

13.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

BUZ73AH

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

120 mJ

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

5.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPI023NE7N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

1100 mJ

120 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0023 ohm

120 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IPI034NE7N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

640 mJ

100 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0034 ohm

100 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IPI052NE7N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

370 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0052 ohm

80 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IPD60R600E6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

19 A

133 mJ

7.3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.6 ohm

7.3 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

BSC205N10LSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

76 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

180 A

60 mJ

45 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0205 ohm

7.4 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

IPB136N08N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

50 mJ

45 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0136 ohm

45 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

IPG15N06S3L-45

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

21 W

PLASTIC/EPOXY

55 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

60 A

47 mJ

15 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.045 ohm

17 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

IPG20N06S3L-23

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

55 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

110 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.023 ohm

33 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

IPG20N06S3L-35

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

55 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.035 ohm

20 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

IPI070N08N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

150 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0067 ohm

80 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

260

IPP070N08N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

150 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.007 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

BG3230E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

IPD20N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

15 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.031 ohm

30 A

SINGLE

R-PSSO-G2

3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

260

BSC240N12NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

120 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

148 A

50 mJ

37 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.024 ohm

37 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SPB100N03S2-03G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.003 ohm

100 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

245

SPB10N10LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42.2 A

60 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.21 ohm

10.3 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-263AB

245

IPI200N15N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

170 mJ

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.02 ohm

50 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

SPB80P06P

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

340 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

824 mJ

80 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.023 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e0

220

SPN04N60S5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

.8 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.95 ohm

.8 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

TO-261AA

e0

BSO4410

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44.5 A

126 mJ

11.1 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.013 ohm

11.1 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

BSO4420

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

230 mJ

13 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0078 ohm

13 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

BSO4804

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

32 A

90 mJ

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.02 ohm

8 A

DUAL

R-PDSO-G8

3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

BSO4822

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

51 A

165 mJ

12.7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.01 ohm

12.7 A

DUAL

R-PDSO-G8

3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

BSP615S2L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11 A

2.8 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.15 ohm

2.8 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

IPD20N03L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

15 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.031 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-252AA

e0

255

SPB100N03S2-03

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

100 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.003 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

SPB100N03S2L-03

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

100 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0034 ohm

100 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-263AB

e0

260

SPB42N03S2L-13

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

64 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

248 A

110 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0196 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-263AB

e0

220

SPB77N06S2-12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

280 mJ

77 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.012 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.