Littelfuse Power Field Effect Transistors (FET) 28

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTA02N250HVTRL

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

2500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.6 A

.2 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

450 ohm

.2 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

10

260

3 pF

IXTY14N60X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

180 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.25 ohm

14 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252

e3

10

260

20 pF

IXTP14N60X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

150 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.25 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

20 pF

IXFT78N60X3HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

780 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

2200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.038 ohm

78 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-268AA

36 pF

IXFH48N60X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

1400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.065 ohm

48 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

18 pF

IXFH60N60X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

1700 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.051 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AD

53 pF

IXFH78N60X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

780 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

2200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.038 ohm

78 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

36 pF

IXFT60N60X3HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

625 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

90 A

1700 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.051 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-268AA

53 pF

IXFH98N60X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

2800 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.03 ohm

98 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

41 pF

IXFP36N60X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.09 ohm

36 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

3.6 pF

IXFH36N60X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.09 ohm

36 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

3.6 pF

LSIC1MO120G0080

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.1 ohm

39 A

SINGLE

R-PSFM-T4

DRAIN

ULTRA LOW RESISTANCE

TO-247AD

9 pF

LSIC1MO120G0120

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.15 ohm

27 A

SINGLE

R-PSFM-T4

DRAIN

ULTRA LOW RESISTANCE

TO-247AD

7 pF

LSIC1MO120G0160

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.2 ohm

22 A

SINGLE

R-PSFM-T4

DRAIN

ULTRA LOW RESISTANCE

TO-247AD

5 pF

LSIC1MO120G0025

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.032 ohm

100 A

SINGLE

R-PSFM-T4

DRAIN

ULTRA LOW RESISTANCE

TO-247AD

14 pF

LSIC1MO120G0040

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.05 ohm

70 A

SINGLE

R-PSFM-T4

DRAIN

ULTRA LOW RESISTANCE

TO-247AD

13 pF

IXTH220N20X4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

800 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

900 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0055 ohm

220 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

5.4 pF

IXTQ48N65X2M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

70 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.065 ohm

48 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

6.4 pF

IXTH94N20X4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0106 ohm

94 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

4 pF

IXTQ34N65X2M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

43 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.096 ohm

34 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

1.7 pF

IXTP60N20X4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

106 A

350 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.021 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

.95 pF

IXTH60N20X4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

106 A

350 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.021 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

.95 pF

IXFP26N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.13 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

1.2 pF

IXFH26N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.13 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

1.2 pF

IXFH70N65X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

780 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

2500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.044 ohm

70 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

25 pF

IXFH34N65X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.1 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

2.6 pF

IXFN74N100X

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1170 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

150 A

2000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.066 ohm

74 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

48 pF

UL RECOGNIZED

IXFH46N65X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

65 A

1200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.073 ohm

46 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

18 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.