Microchip Technology Power Field Effect Transistors (FET) 13

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	JEDEC-95 Code	Maximum Feedback Capacitance (Crss)
MSCSM120AM027CD3AG	Microchip Technology	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2970 W	UNSPECIFIED	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	1400 A		733 A	7	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-40 Cel		.0035 ohm	733 A	UPPER	R-XUFM-X7	ISOLATED		.23 pF
APT1003RSFLLG/TR	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	425 mJ		2	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		3 ohm	4 A	SINGLE	R-PSSO-G2	DRAIN
TC8020K6-G-M937	Microchip Technology	N-CHANNEL AND P-CHANNEL	COMPLEX	YES		UNSPECIFIED	SWITCHING	200 V	NO LEAD	SQUARE	ENHANCEMENT MODE	6				56	CHIP CARRIER	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	25 ns	-55 Cel	35 ns	8 ohm		QUAD	S-XQCC-N56			7 pF
MSCSM70VM19C3AG	Microchip Technology	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND SCR	NO	365 W	UNSPECIFIED	SWITCHING	700 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	250 A		124 A	25	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON CARBIDE		-40 Cel		.019 ohm	124 A	UPPER	R-XUFM-X25	ISOLATED		29 pF
MSC035SMA170S	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	278 W	PLASTIC/EPOXY	SWITCHING	1700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A			2	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-55 Cel		.045 ohm	59 A	SINGLE	R-PSSO-G2	DRAIN	TO-268AA	10 pF
MSC017SMA120J	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	278 W	PLASTIC/EPOXY	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	280 A	3500 mJ	88 A	3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-55 Cel		.022 ohm	88 A	UPPER	R-PUFM-X4	ISOLATED		12 pF
MSC017SMA120B4	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	455 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A		113 A	4	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-55 Cel		.022 ohm	113 A	SINGLE	R-PSFM-T4	DRAIN	TO-247	12 pF
MSCSM170HM12CAG	Microchip Technology	N-CHANNEL	COMPLEX	NO	843 W	UNSPECIFIED	SWITCHING	1700 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	4	360 A			12	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-40 Cel		.015 ohm	179 A	UPPER	R-XUFM-X12	ISOLATED		30 pF
MSCSM170HM23CT3AG	Microchip Technology	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		UNSPECIFIED	SWITCHING	1700 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	4	240 A			25	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-40 Cel		.0225 ohm	124 A	UPPER	R-XUFM-X25	ISOLATED		20 pF
MSCSM170HM45CT3AG	Microchip Technology	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE	NO		UNSPECIFIED	SWITCHING	1700 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	4	130 A			25	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-40 Cel		.045 ohm	64 A	UPPER	R-XUFM-X25	ISOLATED		10 pF
MSCSM170AM11CT3AG	Microchip Technology	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		UNSPECIFIED	SWITCHING	1700 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	480 A			25	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE		-40 Cel		.0113 ohm	240 A	UPPER	R-XUFM-X25	ISOLATED		40 pF
MSC080SMA330B4	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	381 W	PLASTIC/EPOXY	SWITCHING	3300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A			4	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		.105 ohm	41 A	SINGLE	R-PSFM-T4	DRAIN	TO-247	4 pF
MSC400SMA330B4	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	131 W	PLASTIC/EPOXY	SWITCHING	3300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	27 A			4	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON CARBIDE		-55 Cel		.52 ohm	11 A	SINGLE	R-PSFM-T4	DRAIN	TO-247	2 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.