Texas Instruments Power Field Effect Transistors (FET) 49

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

CSD16323Q3C

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

112 A

125 mJ

60 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0072 ohm

21 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

CSD17506Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

150 A

259 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0053 ohm

23 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

65 pF

CSD15571Q2

Texas Instruments

N-CHANNEL

SINGLE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

52 A

18 mJ

22 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0192 ohm

10 A

DUAL

S-PDSO-N6

1

DRAIN

AVALANCHE RATED

e4

30

260

42 pF

CSD19531KCS

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

179 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

285 A

180 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0088 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220

e3

17 pF

CSD19533KCS

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

188 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

207 A

106 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0122 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220

e3

12.5 pF

TPIC5403DW

Texas Instruments

N-CHANNEL

COMPLEX

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

11.25 A

17.2 mJ

2.3 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.39 W

150 Cel

SILICON

85 ns

65 ns

.27 ohm

2.25 A

DUAL

R-PDSO-G24

ISOLATED

Not Qualified

ESD PROTECTED

MS-013AD

NOT SPECIFIED

NOT SPECIFIED

75 pF

TPIC5621LDW

Texas Instruments

N-CHANNEL

COMPLEX

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

3 A

18 mJ

1 A

20

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.389 W

150 Cel

SILICON

110 ns

82 ns

.48 ohm

1 A

DUAL

R-PDSO-G20

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-013AC

NOT SPECIFIED

NOT SPECIFIED

50 pF

TPIC5424LDW

Texas Instruments

N-CHANNEL

COMPLEX

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

3 A

180 mJ

1 A

20

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.389 W

150 Cel

SILICON

110 ns

132 ns

.48 ohm

1 A

DUAL

R-PDSO-G20

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-013AC

NOT SPECIFIED

NOT SPECIFIED

125 pF

TPIC5302D

Texas Instruments

N-CHANNEL

SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE

YES

.87 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3

7 A

10.5 mJ

1.4 A

16

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.087 W

150 Cel

SILICON

56 ns

84 ns

.35 ohm

1.4 A

DUAL

R-PDSO-G16

ISOLATED

Not Qualified

MS-012AC

NOT SPECIFIED

NOT SPECIFIED

40 pF

BF351

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

.05 A

BF352

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

.05 A

TPIC2701N

Texas Instruments

N-CHANNEL

COMMON SOURCE, 7 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

7

3 A

22 mJ

16

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.9 ohm

.5 A

DUAL

R-PDIP-T16

Not Qualified

MS-001BB

NOT SPECIFIED

NOT SPECIFIED

CSD17576Q5BT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

115 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0029 ohm

30 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e4

30

260

196 pF

CSD25302Q2

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

20 A

5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.092 ohm

5 A

DUAL

S-PDSO-N6

1

SOURCE

Not Qualified

AVALANCHE RATED

e3

30

260

CSD75211W1723

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

4.5 A

12

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.07 ohm

4.5 A

BOTTOM

R-PBGA-B12

1

Not Qualified

e1

30

260

CSD17556Q5BT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

214 A

500 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0018 ohm

34 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

88 pF

CSD17559Q5T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

541 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0015 ohm

40 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

113 pF

CSD25401Q3

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

82 A

60 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0182 ohm

14 A

DUAL

R-PDSO-N8

1

SOURCE

Not Qualified

AVALANCHE RATED

e3

30

260

CSD16321Q5C

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

200 A

218 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0038 ohm

100 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

CSD16325Q5C

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

200 A

500 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0029 ohm

33 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

CSD16322Q5C

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

136 A

125 mJ

97 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.007 ohm

97 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

CSD19535KCS

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

451 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0044 ohm

150 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220

e3

38 pF

CSD87384MT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

30 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

2

95 A

231 mJ

5

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

.0089 ohm

BOTTOM

R-PBGA-B5

1

e4

NOT SPECIFIED

260

114 pF

CSD16340Q3T

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

115 A

80 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0078 ohm

21 A

DUAL

S-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

69 pF

CSD18503Q5AT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

321 A

157 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0062 ohm

19 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

16 pF

CSD87501LT

Texas Instruments

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

2

10

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

BOTTOM

R-PBGA-B10

1

e4

30

260

198 pF

CSD18563Q5A-P

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

251 A

146 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0108 ohm

15 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

5.1 pF

CSD19535KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

451 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0041 ohm

200 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

38 pF

CSD18542KCS

Texas Instruments

N-CHANNEL

SINGLE

NO

200 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

1.8

1

400 A

281 mJ

170 A

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

-55 Cel

MATTE TIN

170 A

SINGLE

R-PSFM-T3

DRAIN

e3

14 pF

CSD16415Q5T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

200 A

500 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0018 ohm

38 A

DUAL

R-PDSO-N5

1

DRAIN

AVALANCHE RATED

e3

30

260

230 pF

CSD18535KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

616 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0029 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

31 pF

CSD18535KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

616 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0029 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

31 pF

CSD18536KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

819 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0022 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

51 pF

CSD18542KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

281 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0051 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

14 pF

CSD19505KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

510 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0038 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

34 pF

CSD19538Q3A

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

37 A

8.1 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.072 ohm

4.9 A

DUAL

R-PDSO-F5

1

DRAIN

AVALANCHE RATED

e3

30

260

16.4 pF

CSD18510KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

328 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0026 ohm

200 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

551 pF

CSD18512Q5BT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

205 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0023 ohm

32 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e4

30

260

333 pF

CSD87313DMST

Texas Instruments

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

67 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

DUAL

S-PDSO-N6

1

SOURCE

AVALANCHE RATED

e3

30

260

200 pF

CSD18511KCS

Texas Instruments

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

156 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

e3

306 pF

CSD18511KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

156 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

110 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

306 pF

CSD18511KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

156 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

110 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

306 pF

CSD17507Q5AT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

163 A

45 mJ

65 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0161 ohm

65 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

30 pF

LMG3422R030RQZR

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

55 A

54

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.035 ohm

QUAD

S-PQCC-N54

3

e4

260

CSD16321Q5T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

218 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0038 ohm

100 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

150 pF

LMG3425R030RQZT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

DEPLETION MODE

1

55 A

54

CHIP CARRIER

JUNCTION

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.035 ohm

QUAD

S-PQCC-N54

3

e4

260

LMG3425R030RQZR

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

DEPLETION MODE

1

55 A

54

CHIP CARRIER

JUNCTION

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.035 ohm

QUAD

S-PQCC-N54

3

e4

260

LMG3422R050RQZT

Texas Instruments

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

44 A

54

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

125 Cel

GALLIUM NITRIDE

56 ns

-40 Cel

86 ns

NICKEL PALLADIUM GOLD

.055 ohm

QUAD

S-PQCC-N54

3

e4

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.