SINGLE RF Power Field Effect Transistors (FET) 236

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Manufacturers
    • Ampleon Netherlands B V
    • Broadcom
    • Freescale Semiconductor
    • Fujitsu
    • Gan Systems
    • IXYS Corporation
    • Infineon Technologies
    • Littelfuse
    • M/a-com Technology Solutions
    • Microchip Technology
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sumitomo Electric Industries
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Wolfspeed
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration (1)
    • SINGLE
    • COMMON SOURCE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
    • COMMON SOURCE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SINGLE WITH BUILT-IN DIODE
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .079 W
    • .4 W
    • .795 W
    • 1.6 W
    • 10 W
    • 100 W
    • 105 W
    • 1052 W
    • 108 W
    • 11.7 W
    • 110 W
    • 115 W
    • 116 W
    • 117 W
    • 118 W
    • 12.5 W
    • 120 W
    • 125 W
    • 130 W
    • 1300 W
    • 1333 W
    • 135 W
    • 139 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 151 W
    • 152 W
    • 158 W
    • 159 W
    • 16 W
    • 160 W
    • 161 W
    • 165 W
    • 1670 W
    • 17.8 W
    • 170 W
    • 173 W
    • 175 W
    • 177 W
    • 18.8 W
    • 180 W
    • 182 W
    • 184 W
    • 186 W
    • 19 W
    • 19.5 W
    • 190 W
    • 196 W
    • 197 W
    • 2.5 W
    • 20 W
    • 20.5 W
    • 20.8 W
    • 200 W
    • 211 W
    • 216 W
    • 217 W
    • 218.8 W
    • 219 W
    • 220 W
    • 223 W
    • 224 W
    • 227 W
    • 230 W
    • 236 W
    • 25 W
    • 250 W
    • 252 W
    • 26.6 W
    • 26.7 W
    • 261 W
    • 265 W
    • 266 W
    • 269 W
    • 270 W
    • 273 W
    • 278 W
    • 289 W
    • 29 W
    • 290 W
    • 292 W
    • 294 W
    • 298 W
    • 3 W
    • 3.1 W
    • 300 W
    • 302 W
    • 307 W
    • 31 W
    • 31.2 W
    • 31.7 W
    • 31.8 W
    • 315 W
    • 317 W
    • 318 W
    • 324 W
    • 330 W
    • 335 W
    • 336 W
    • 343 W
    • 35 W
    • 350 W
    • 357 W
    • 36.5 W
    • 372 W
    • 38 W
    • 38.9 W
    • 380 W
    • 388 W
    • 389 W
    • 39 W
    • 398 W
    • 4 W
    • 40 W
    • 407 W
    • 417 W
    • 427 W
    • 43.75 W
    • 437 W
    • 437.5 W
    • 438 W
    • 44 W
    • 448 W
    • 449 W
    • 45 W
    • 473 W
    • 476 W
    • 48 W
    • 486 W
    • 498 W
    • 5 W
    • 500 W
    • 52.8 W
    • 530 W
    • 565 W
    • 58 W
    • 59 W
    • 6 W
    • 603 W
    • 61.4 W
    • 62.5 W
    • 625 W
    • 643 W
    • 647 W
    • 648 W
    • 65 W
    • 68 W
    • 690 W
    • 7 W
    • 700 W
    • 73 W
    • 74 W
    • 75 W
    • 761 W
    • 79 W
    • 79.5 W
    • 795 W
    • 8.3 W
    • 800 W
    • 83.3 W
    • 86 W
    • 87.5 W
    • 9 W
    • 92 W
    • 93 W
    • 95 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 104 V
    • 105 V
    • 106 V
    • 108 V
    • 110 V
    • 112 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 130 V
    • 133 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17 V
    • 170 V
    • 177 V
    • 179 V
    • 19 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 28 V
    • 3.8 V
    • 30 V
    • 36 V
    • 4.2 V
    • 40 V
    • 5.5 V
    • 50 V
    • 500 V
    • 6 V
    • 60 V
    • 65 V
    • 650 V
    • 66 V
    • 68 V
    • 7 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 84 V
    • 89 V
    • 9 V
    • 90 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.75 dB
    • 11 dB
    • 11.3 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 12.7 dB
    • 12.9 dB
    • 13 dB
    • 13.3 dB
    • 13.5 dB
    • 14 dB
    • 14.1 dB
    • 14.2 dB
    • 14.3 dB
    • 14.5 dB
    • 14.75 dB
    • 14.9 dB
    • 15 dB
    • 15.5 dB
    • 15.55 dB
    • 15.75 dB
    • 16 dB
    • 16.2 dB
    • 16.5 dB
    • 16.7 dB
    • 17 dB
    • 17.4 dB
    • 17.5 dB
    • 17.6 dB
    • 18 dB
    • 18.5 dB
    • 18.9 dB
    • 19 dB
    • 19.5 dB
    • 20 dB
    • 20.5 dB
    • 21 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 24.5 dB
    • 26.8 dB
    • 5.5 dB
    • 7.5 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Pulsed Drain Current (IDM)
    • 72 A
Maximum Drain Current (Abs) (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .83 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.5 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 33 A
    • 34 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 46 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 9 A
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 24
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • 1.5 W
    • 10 W
    • 10.5 W
    • 100 W
    • 110 W
    • 115 W
    • 115.4 W
    • 117 W
    • 118 W
    • 12 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 162.5 W
    • 165 W
    • 175 W
    • 18 W
    • 185 W
    • 187 W
    • 187.5 W
    • 2.5 W
    • 20 W
    • 21.4 W
    • 215 W
    • 22 W
    • 22.7 W
    • 220 W
    • 225 W
    • 23 W
    • 23.1 W
    • 25 W
    • 250 W
    • 270 W
    • 28.3 W
    • 280 W
    • 3 W
    • 3.3 W
    • 30 W
    • 300 W
    • 32.5 W
    • 33 W
    • 330 W
    • 37.5 W
    • 38 W
    • 39.5 W
    • 4 W
    • 40.5 W
    • 42.8 W
    • 42.9 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 60 W
    • 62.5 W
    • 68 W
    • 7.5 W
    • 70 W
    • 75 W
    • 83.3 W
    • 85 W
    • 87.5 W
    • 92 W
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
    • 90 Cel
Transistor Element Material
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
    • SILICON CARBIDE
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
Terminal Finish
    • GOLD
    • GOLD (10)
    • GOLD NICKEL
    • GOLD OVER NICKEL
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold/Nickel (Au/Ni)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Gold/Cobalt (Ni/Au/Co)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
    • .112 ohm
    • .15 ohm
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .75 ohm
    • 1.05 ohm
    • 1.25 ohm
    • 1.5 ohm
    • 2.5 ohm
    • 2.7 ohm
    • 5 ohm
Maximum Drain Current (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 13.9 A
    • 14 A
    • 15 A
    • 15.5 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 27.8 A
    • 28 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.3 A
    • 3.5 A
    • 3.6 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 32.5 A
    • 33 A
    • 34 A
    • 35 A
    • 36 A
    • 37 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 45 A
    • 46 A
    • 48 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 56 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 7.5 A
    • 72 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 8.7 A
    • 88 A
    • 9 A
    • 90 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • O-CRFM-F4
    • O-CXDB-F6
    • O-CXFM-F6
    • O-MBCY-W3
    • O-PRFM-F4
    • R-CDFM-F2
    • R-CDFM-F3
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFM-G2
    • R-CDFM-G4
    • R-CDFP-F2
    • R-CDFP-F3
    • R-CDFP-F4
    • R-CDFP-F6
    • R-CDFP-F8
    • R-CDFP-X6
    • R-CDSO-F2
    • R-CDSO-G2
    • R-CDSO-G4
    • R-CDSO-G8
    • R-CDSO-N2
    • R-CQFM-F6
    • R-CQFM-F8
    • R-CQFM-X6
    • R-CQFP-F6
    • R-CQFP-F8
    • R-CQFP-X2
    • R-CQFP-X4
    • R-CQFP-X6
    • R-CQMW-F4
    • R-CQSO-X4
    • R-CQSO-X6
    • R-MDFM-F4
    • R-MDSO-G8
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-C6
    • R-PDFM-C8
    • R-PDFM-F12
    • R-PDFM-F16
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDFM-G16
    • R-PDFM-G2
    • R-PDFM-G4
    • R-PDFP-F2
    • R-PDFP-F4
    • R-PDFP-F6
    • R-PDFP-F8
    • R-PDSO-F16
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PDSO-N10
    • R-PDSO-N12
    • R-PDSO-N16
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PQCC-N4
    • R-PQFP-F4
    • R-PQFP-F6
    • R-PQFP-X4
    • R-PQMW-F4
    • R-PQSO-F3
    • R-PQSO-F4
    • R-PQSO-N4
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDFM-F2
    • R-XDFM-F4
    • R-XDFP-F2
    • R-XDFP-F4
    • R-XDSO-G8
    • R-XQFP-F4
    • R-XQMW-F
    • R-XQMW-F4
    • R-XQSO-F4
    • R-XUUC-N
    • R-XUUC-N13
    • R-XUUC-N14
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XUUC-N9
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFM-F4
    • S-CDFP-F2
    • S-CDSO-G2
    • S-CQCC-N12
    • S-CQCC-N16
    • S-CQFM-F6
    • S-CQFP-F6
    • S-CQMW-F4
    • S-PBCC-N24
    • S-PDSO-N10
    • S-PDSO-N2
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N12
    • S-PQCC-N5
    • S-PQSO-N4
    • S-XBCC-N3
    • S-XDSO-G2
    • S-XDSO-N2
    • S-XQCC-N16
    • X-CXMW-F4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • 6
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • ISOLATED
    • SOURCE
Qualification
    • Not Qualified
Additional Features
    • AVALANCHE RATED
    • ESD PROTECTED
    • ESD PROTECTED, HIGH RELIABILITY
    • ESD PROTECTION
    • ESD PROTECTION, HIGH RELIABILITY
    • HGH RELIABILITY
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-247AD
    • TO-270
    • TO-270AA
    • TO-270BA
    • TO-270BB
    • TO-272
    • TO-272AA
    • TO-272BA
    • TO-39
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 240
    • 245
    • 250
    • 255
    • 260
    • 270
    • 280
    • NOT APPLICABLE
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .13 pF
    • .15 pF
    • .186 pF
    • .2 pF
    • .26 pF
    • .3 pF
    • .4 pF
    • .46 pF
    • .53 pF
    • .6 pF
    • .7 pF
    • 1 pF
    • 1.04 pF
    • 1.1 pF
    • 1.16 pF
    • 1.6 pF
    • 10 pF
    • 2 pF
    • 2.43 pF
    • 2.5 pF
    • 2.8 pF
    • 2.98 pF
    • 21 pF
    • 24 pF
    • 25 pF
    • 3 pF
    • 3.3 pF
    • 35 pF
    • 40 pF
    • 5.2 pF
    • 65 pF
    • 8 pF
Reference Standard
    • ESA-SCC-5614/008
    • IEC-60134
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

CGH35015F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

GOLD OVER NICKEL

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e4

CGH35240F

Wolfspeed

N-CHANNEL

SINGLE

NO

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

84 V

10.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

-40 Cel

24 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CGH40006P

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

.75 A

2

FLATPACK

FET RF Small Signal

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

.75 A

DUAL

R-CDFP-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CGH40010F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

2

FLANGE MOUNT

FET RF Small Signal

HIGH ELECTRON MOBILITY

105 Cel

GALLIUM NITRIDE

GOLD OVER NICKEL

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e4

CGH40010P

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

2

FLATPACK

FET RF Small Signal

HIGH ELECTRON MOBILITY

105 Cel

GALLIUM NITRIDE

DUAL

R-CDFP-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CGH40025F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

2

FLANGE MOUNT

FET RF Small Signal

HIGH ELECTRON MOBILITY

175 Cel

GALLIUM NITRIDE

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CGH40025P

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

2

FLATPACK

FET RF Small Signal

HIGH ELECTRON MOBILITY

175 Cel

GALLIUM NITRIDE

DUAL

R-CDFP-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CGH40035F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET RF Small Signal

HIGH ELECTRON MOBILITY

175 Cel

GALLIUM NITRIDE

GOLD OVER NICKEL

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e4

CGH40045F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET RF Small Signal

HIGH ELECTRON MOBILITY

175 Cel

GALLIUM NITRIDE

GOLD OVER NICKEL

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e4

CGH40120F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

-40 Cel

GOLD OVER NICKEL

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e4

CGH40180PP

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

4

FLANGE MOUNT

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

DUAL

R-CDFM-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CGH25120F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

SQUARE

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

DUAL

S-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CGH27015F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

GOLD OVER NICKEL

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e4

CGH31240F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

LET16045C

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

PLASTIC/EPOXY

AMPLIFIER

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

9 A

2

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

9 A

DUAL

R-PDFM-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

LET16060C

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

PLASTIC/EPOXY

AMPLIFIER

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

12 A

2

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

12 A

DUAL

R-PDFM-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

LET20045C

STMicroelectronics

N-CHANNEL

SINGLE

YES

130 W

PLASTIC/EPOXY

AMPLIFIER

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

12 A

2

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

12 A

DUAL

R-PDFM-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

STAC0912-250

STMicroelectronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-PDFM-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

STAC1011-350

STMicroelectronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-PDFM-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

PD85006TR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

36.5 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

Matte Tin (Sn) - annealed

2 A

DUAL

R-PDSO-G2

3

SOURCE

HIGH RELIABILITY

e3

30

250

LET9060TR

STMicroelectronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

12 A

DUAL

R-PDSO-G2

SOURCE

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

LET9060

STMicroelectronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

12 A

DUAL

R-PDSO-G2

SOURCE

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

SD2931-10W

STMicroelectronics

N-CHANNEL

SINGLE

YES

389 W

PLASTIC/EPOXY

125 V

FLAT

ROUND

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

20 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

20 A

RADIAL

O-PRFM-F4

NOT SPECIFIED

NOT SPECIFIED

SD2932W

STMicroelectronics

N-CHANNEL

SINGLE

500 W

1

40 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

40 A

NOT SPECIFIED

NOT SPECIFIED

SD2933W

STMicroelectronics

N-CHANNEL

SINGLE

YES

648 W

1

40 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

40 A

NOT SPECIFIED

NOT SPECIFIED

SD2942W

STMicroelectronics

N-CHANNEL

SINGLE

500 W

1

40 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

40 A

NOT SPECIFIED

NOT SPECIFIED

SD2943W

STMicroelectronics

N-CHANNEL

SINGLE

648 W

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

40 A

NOT SPECIFIED

NOT SPECIFIED

STAC2942BW

STMicroelectronics

N-CHANNEL

SINGLE

625 W

1

40 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

40 A

NOT SPECIFIED

NOT SPECIFIED

CGHV96050F1

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

100 V

10.75 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

6 A

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

-40 Cel

6 A

DUAL

R-CDFM-F2

CGHV96050F2

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

100 V

10 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

6 A

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

125 Cel

GALLIUM NITRIDE

-40 Cel

6 A

DUAL

R-CDFM-F2

CGHV96100F2

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

100 V

10.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

12 A

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

125 Cel

GALLIUM NITRIDE

-40 Cel

12 A

DUAL

R-CDFM-F2

NE5550234-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

12.5 W

1

.6 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.6 A

NE5550234-T1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

12.5 W

1

.6 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.6 A

NE5550779A-A

Renesas Electronics

N-CHANNEL

SINGLE

17.8 W

1

2.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.1 A

NE5550779A-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

17.8 W

1

2.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.1 A

NE5550979A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

25 W

1

3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

NE5550979A-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

25 W

1

3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

STAC2933

STMicroelectronics

N-CHANNEL

SINGLE

YES

795 W

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

40 A

NOT SPECIFIED

NOT SPECIFIED

STAC2943

STMicroelectronics

N-CHANNEL

SINGLE

YES

795 W

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

40 A

NOT SPECIFIED

NOT SPECIFIED

STAC3933

STMicroelectronics

N-CHANNEL

SINGLE

YES

795 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

STAC4933

STMicroelectronics

N-CHANNEL

SINGLE

YES

795 W

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

40 A

NOT SPECIFIED

NOT SPECIFIED

SD2931-12MR

STMicroelectronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

125 V

FLAT

ROUND

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

20 A

RADIAL

O-PRFM-F4

3

SOURCE

250

SD2903

STMicroelectronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

5 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

5 A

DUAL

R-PDFM-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SD2900

STMicroelectronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

ROUND

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.83 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.9 A

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SD2902

STMicroelectronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

ROUND

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2.5 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

2.5 A

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SD2904

STMicroelectronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

ROUND

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

5 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

5 A

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SD2931

STMicroelectronics

N-CHANNEL

SINGLE

NO

292 W

PLASTIC/EPOXY

125 V

FLAT

ROUND

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

20 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

20 A

RADIAL

O-PRFM-F4

Not Qualified

e0

SD2932

STMicroelectronics

N-CHANNEL

SINGLE

YES

500 W

PLASTIC/EPOXY

125 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

40 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

40 A

DUAL

R-PDFM-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.