Broadcom RF Power Field Effect Transistors (FET) 61

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Manufacturers (1)
    • Broadcom
    • Ampleon Netherlands B V
    • Freescale Semiconductor
    • Fujitsu
    • Gan Systems
    • IXYS Corporation
    • Infineon Technologies
    • Littelfuse
    • M/a-com Technology Solutions
    • Microchip Technology
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sumitomo Electric Industries
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Wolfspeed
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
    • COMMON SOURCE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .079 W
    • .4 W
    • .795 W
    • 1.6 W
    • 10 W
    • 100 W
    • 105 W
    • 1052 W
    • 108 W
    • 11.7 W
    • 110 W
    • 115 W
    • 116 W
    • 117 W
    • 118 W
    • 12.5 W
    • 120 W
    • 125 W
    • 130 W
    • 1300 W
    • 1333 W
    • 135 W
    • 139 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 151 W
    • 152 W
    • 158 W
    • 159 W
    • 16 W
    • 160 W
    • 161 W
    • 165 W
    • 1670 W
    • 17.8 W
    • 170 W
    • 173 W
    • 175 W
    • 177 W
    • 18.8 W
    • 180 W
    • 182 W
    • 184 W
    • 186 W
    • 19 W
    • 19.5 W
    • 190 W
    • 196 W
    • 197 W
    • 2.5 W
    • 20 W
    • 20.5 W
    • 20.8 W
    • 200 W
    • 211 W
    • 216 W
    • 217 W
    • 218.8 W
    • 219 W
    • 220 W
    • 223 W
    • 224 W
    • 227 W
    • 230 W
    • 236 W
    • 25 W
    • 250 W
    • 252 W
    • 26.6 W
    • 26.7 W
    • 261 W
    • 265 W
    • 266 W
    • 269 W
    • 270 W
    • 273 W
    • 278 W
    • 289 W
    • 29 W
    • 290 W
    • 292 W
    • 294 W
    • 298 W
    • 3 W
    • 3.1 W
    • 300 W
    • 302 W
    • 307 W
    • 31 W
    • 31.2 W
    • 31.7 W
    • 31.8 W
    • 315 W
    • 317 W
    • 318 W
    • 324 W
    • 330 W
    • 335 W
    • 336 W
    • 343 W
    • 35 W
    • 350 W
    • 357 W
    • 36.5 W
    • 372 W
    • 38 W
    • 38.9 W
    • 380 W
    • 388 W
    • 389 W
    • 39 W
    • 398 W
    • 4 W
    • 40 W
    • 407 W
    • 417 W
    • 427 W
    • 43.75 W
    • 437 W
    • 437.5 W
    • 438 W
    • 44 W
    • 448 W
    • 449 W
    • 45 W
    • 473 W
    • 476 W
    • 48 W
    • 486 W
    • 498 W
    • 5 W
    • 500 W
    • 52.8 W
    • 530 W
    • 565 W
    • 58 W
    • 59 W
    • 6 W
    • 603 W
    • 61.4 W
    • 62.5 W
    • 625 W
    • 643 W
    • 647 W
    • 648 W
    • 65 W
    • 68 W
    • 690 W
    • 7 W
    • 700 W
    • 73 W
    • 74 W
    • 75 W
    • 761 W
    • 79 W
    • 79.5 W
    • 795 W
    • 8.3 W
    • 800 W
    • 83.3 W
    • 86 W
    • 87.5 W
    • 9 W
    • 92 W
    • 93 W
    • 95 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 104 V
    • 105 V
    • 106 V
    • 108 V
    • 110 V
    • 112 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 130 V
    • 133 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17 V
    • 170 V
    • 177 V
    • 179 V
    • 19 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 28 V
    • 3.8 V
    • 30 V
    • 36 V
    • 4.2 V
    • 40 V
    • 5.5 V
    • 50 V
    • 500 V
    • 6 V
    • 60 V
    • 65 V
    • 650 V
    • 66 V
    • 68 V
    • 7 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 84 V
    • 89 V
    • 9 V
    • 90 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.75 dB
    • 11 dB
    • 11.3 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 12.7 dB
    • 12.9 dB
    • 13 dB
    • 13.3 dB
    • 13.5 dB
    • 14 dB
    • 14.1 dB
    • 14.2 dB
    • 14.3 dB
    • 14.5 dB
    • 14.75 dB
    • 14.9 dB
    • 15 dB
    • 15.5 dB
    • 15.55 dB
    • 15.75 dB
    • 16 dB
    • 16.2 dB
    • 16.5 dB
    • 16.7 dB
    • 17 dB
    • 17.4 dB
    • 17.5 dB
    • 17.6 dB
    • 18 dB
    • 18.5 dB
    • 18.9 dB
    • 19 dB
    • 19.5 dB
    • 20 dB
    • 20.5 dB
    • 21 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 24.5 dB
    • 26.8 dB
    • 5.5 dB
    • 7.5 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Pulsed Drain Current (IDM)
    • 72 A
Maximum Drain Current (Abs) (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .83 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.5 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 33 A
    • 34 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 46 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 9 A
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 24
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • 1.5 W
    • 10 W
    • 10.5 W
    • 100 W
    • 110 W
    • 115 W
    • 115.4 W
    • 117 W
    • 118 W
    • 12 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 162.5 W
    • 165 W
    • 175 W
    • 18 W
    • 185 W
    • 187 W
    • 187.5 W
    • 2.5 W
    • 20 W
    • 21.4 W
    • 215 W
    • 22 W
    • 22.7 W
    • 220 W
    • 225 W
    • 23 W
    • 23.1 W
    • 25 W
    • 250 W
    • 270 W
    • 28.3 W
    • 280 W
    • 3 W
    • 3.3 W
    • 30 W
    • 300 W
    • 32.5 W
    • 33 W
    • 330 W
    • 37.5 W
    • 38 W
    • 39.5 W
    • 4 W
    • 40.5 W
    • 42.8 W
    • 42.9 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 60 W
    • 62.5 W
    • 68 W
    • 7.5 W
    • 70 W
    • 75 W
    • 83.3 W
    • 85 W
    • 87.5 W
    • 92 W
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
    • 90 Cel
Transistor Element Material
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
    • SILICON CARBIDE
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
Terminal Finish
    • GOLD
    • GOLD (10)
    • GOLD NICKEL
    • GOLD OVER NICKEL
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold/Nickel (Au/Ni)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Gold/Cobalt (Ni/Au/Co)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
    • .112 ohm
    • .15 ohm
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .75 ohm
    • 1.05 ohm
    • 1.25 ohm
    • 1.5 ohm
    • 2.5 ohm
    • 2.7 ohm
    • 5 ohm
Maximum Drain Current (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 13.9 A
    • 14 A
    • 15 A
    • 15.5 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 27.8 A
    • 28 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.3 A
    • 3.5 A
    • 3.6 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 32.5 A
    • 33 A
    • 34 A
    • 35 A
    • 36 A
    • 37 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 45 A
    • 46 A
    • 48 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 56 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 7.5 A
    • 72 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 8.7 A
    • 88 A
    • 9 A
    • 90 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • O-CRFM-F4
    • O-CXDB-F6
    • O-CXFM-F6
    • O-MBCY-W3
    • O-PRFM-F4
    • R-CDFM-F2
    • R-CDFM-F3
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFM-G2
    • R-CDFM-G4
    • R-CDFP-F2
    • R-CDFP-F3
    • R-CDFP-F4
    • R-CDFP-F6
    • R-CDFP-F8
    • R-CDFP-X6
    • R-CDSO-F2
    • R-CDSO-G2
    • R-CDSO-G4
    • R-CDSO-G8
    • R-CDSO-N2
    • R-CQFM-F6
    • R-CQFM-F8
    • R-CQFM-X6
    • R-CQFP-F6
    • R-CQFP-F8
    • R-CQFP-X2
    • R-CQFP-X4
    • R-CQFP-X6
    • R-CQMW-F4
    • R-CQSO-X4
    • R-CQSO-X6
    • R-MDFM-F4
    • R-MDSO-G8
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-C6
    • R-PDFM-C8
    • R-PDFM-F12
    • R-PDFM-F16
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDFM-G16
    • R-PDFM-G2
    • R-PDFM-G4
    • R-PDFP-F2
    • R-PDFP-F4
    • R-PDFP-F6
    • R-PDFP-F8
    • R-PDSO-F16
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PDSO-N10
    • R-PDSO-N12
    • R-PDSO-N16
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PQCC-N4
    • R-PQFP-F4
    • R-PQFP-F6
    • R-PQFP-X4
    • R-PQMW-F4
    • R-PQSO-F3
    • R-PQSO-F4
    • R-PQSO-N4
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDFM-F2
    • R-XDFM-F4
    • R-XDFP-F2
    • R-XDFP-F4
    • R-XDSO-G8
    • R-XQFP-F4
    • R-XQMW-F
    • R-XQMW-F4
    • R-XQSO-F4
    • R-XUUC-N
    • R-XUUC-N13
    • R-XUUC-N14
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XUUC-N9
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFM-F4
    • S-CDFP-F2
    • S-CDSO-G2
    • S-CQCC-N12
    • S-CQCC-N16
    • S-CQFM-F6
    • S-CQFP-F6
    • S-CQMW-F4
    • S-PBCC-N24
    • S-PDSO-N10
    • S-PDSO-N2
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N12
    • S-PQCC-N5
    • S-PQSO-N4
    • S-XBCC-N3
    • S-XDSO-G2
    • S-XDSO-N2
    • S-XQCC-N16
    • X-CXMW-F4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • 6
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • ISOLATED
    • SOURCE
Qualification
    • Not Qualified
Additional Features
    • AVALANCHE RATED
    • ESD PROTECTED
    • ESD PROTECTED, HIGH RELIABILITY
    • ESD PROTECTION
    • ESD PROTECTION, HIGH RELIABILITY
    • HGH RELIABILITY
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-247AD
    • TO-270
    • TO-270AA
    • TO-270BA
    • TO-270BB
    • TO-272
    • TO-272AA
    • TO-272BA
    • TO-39
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 240
    • 245
    • 250
    • 255
    • 260
    • 270
    • 280
    • NOT APPLICABLE
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .13 pF
    • .15 pF
    • .186 pF
    • .2 pF
    • .26 pF
    • .3 pF
    • .4 pF
    • .46 pF
    • .53 pF
    • .6 pF
    • .7 pF
    • 1 pF
    • 1.04 pF
    • 1.1 pF
    • 1.16 pF
    • 1.6 pF
    • 10 pF
    • 2 pF
    • 2.43 pF
    • 2.5 pF
    • 2.8 pF
    • 2.98 pF
    • 21 pF
    • 24 pF
    • 25 pF
    • 3 pF
    • 3.3 pF
    • 35 pF
    • 40 pF
    • 5.2 pF
    • 65 pF
    • 8 pF
Reference Standard
    • ESA-SCC-5614/008
    • IEC-60134
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

ATF-50189-BLK

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

14 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

1 A

3

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

150 Cel

SILICON

TIN

1 A

SINGLE

R-PSSO-F3

2

Not Qualified

LOW NOISE

MO-229

e3

260

AGR09045GUM

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

DUAL

R-PDSO-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR09030EU

Broadcom

N-CHANNEL

SINGLE

YES

87.5 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

4.25 A

DUAL

R-CDFP-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR26045EF

Broadcom

N-CHANNEL

SINGLE

YES

117 W

CERAMIC, METAL-SEALED COFIRED

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGRB10XM

Broadcom

N-CHANNEL

SINGLE

YES

31.8 W

PLASTIC/EPOXY

AMPLIFIER

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G8

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

240

AGR19125EF

Broadcom

N-CHANNEL

SINGLE

YES

350 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR19125EU

Broadcom

N-CHANNEL

SINGLE

YES

350 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFP-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR21010EU

Broadcom

N-CHANNEL

SINGLE

YES

39 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDSO-G2

Not Qualified

HIGH RELIABILITY

e0

30

240

AGR09180EU

Broadcom

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

500 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

DUAL

R-CDFP-F4

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR19045EF

Broadcom

N-CHANNEL

SINGLE

YES

115 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

240

AGR09030GUM

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

DUAL

R-PDSO-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGRA5XU

Broadcom

N-CHANNEL

SINGLE

YES

20.5 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDSO-G2

Not Qualified

HIGH RELIABILITY

e0

30

240

AGRB10E

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

DUAL

R-CDSO-G2

Not Qualified

HIGH RELIABILITY

e0

30

240

AGR21180EF

Broadcom

N-CHANNEL

SINGLE

YES

500 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR19090EU

Broadcom

N-CHANNEL

SINGLE

YES

230 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFP-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR21125EF

Broadcom

N-CHANNEL

SINGLE

YES

350 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR21060EU

Broadcom

N-CHANNEL

SINGLE

YES

175 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFP-F2

Not Qualified

HIGH RELIABILITY

e0

NOT SPECIFIED

NOT SPECIFIED

AGR18125EF

Broadcom

N-CHANNEL

SINGLE

YES

350 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR21060EF

Broadcom

N-CHANNEL

SINGLE

YES

175 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

NOT SPECIFIED

NOT SPECIFIED

AGR09130EF

Broadcom

N-CHANNEL

SINGLE

YES

350 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

15 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

15 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR09060GUM

Broadcom

N-CHANNEL

SINGLE

YES

175 W

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR09030XUM

Broadcom

N-CHANNEL

SINGLE

YES

87.5 W

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4.25 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

4.25 A

DUAL

R-PDSO-F2

SOURCE

Not Qualified

e0

30

225

ATF-511P8-TR1

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

1 A

8

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

3 W

150 Cel

SILICON

MATTE TIN

1 A

DUAL

R-PDSO-N8

1

SOURCE

Not Qualified

LOW NOISE

e3

260

AGRA10GM

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

DUAL

R-PDSO-G8

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

240

AGR19180EF

Broadcom

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

500 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR18030EU

Broadcom

N-CHANNEL

SINGLE

YES

87.5 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

6.2 A

DUAL

R-CDFP-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

240

AGR26125EU

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

DUAL

R-CDFP-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGRA10EU

Broadcom

N-CHANNEL

SINGLE

YES

38.9 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDSO-G2

Not Qualified

HIGH RELIABILITY

e0

30

240

AGR19K180EF

Broadcom

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

8.5 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

8.5 A

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

ATF-511P8-TR2

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

1 A

8

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

3 W

150 Cel

SILICON

MATTE TIN

1 A

DUAL

R-PDSO-N8

1

SOURCE

Not Qualified

LOW NOISE

e3

260

AGR18060EF

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

6.2 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

6.2 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR09130EU

Broadcom

N-CHANNEL

SINGLE

YES

350 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

15 A

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

15 A

DUAL

R-CDFP-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR09045XUM

Broadcom

N-CHANNEL

SINGLE

YES

125 W

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4.25 A

DUAL

R-PDSO-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR18060EU

Broadcom

N-CHANNEL

SINGLE

YES

175 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

6.2 A

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

6.2 A

DUAL

R-CDFP-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR21180EU

Broadcom

N-CHANNEL

SINGLE

YES

500 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

4

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

DUAL

R-CDFP-F4

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR18125EU

Broadcom

N-CHANNEL

SINGLE

YES

350 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFP-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR19060EF

Broadcom

N-CHANNEL

SINGLE

YES

175 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR19180EU

Broadcom

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

500 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFP-F4

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGRA10XM

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

DUAL

R-PDSO-G8

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

240

AGR18090EU

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

8.5 A

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

8.5 A

DUAL

R-CDFP-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR09045EU

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

4.25 A

DUAL

R-CDFP-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

240

AGR21030EF

Broadcom

N-CHANNEL

SINGLE

YES

87.5 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR09030EF

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

4.25 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR21045EF

Broadcom

N-CHANNEL

SINGLE

YES

117 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR19090EF

Broadcom

N-CHANNEL

SINGLE

YES

230 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR09070EF

Broadcom

N-CHANNEL

SINGLE

YES

265 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

8.5 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN LEAD

8.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR09180EF

Broadcom

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

500 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

AGR09085EF

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

8.5 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

8.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

30

225

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.