DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Small Signal Bipolar Junction Transistors (BJT) 12

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BSP50E6327HTSA1

Infineon Technologies

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

45 V

DUAL

R-PDSO-G4

1

COLLECTOR

AEC-Q101

BSP60E6327HTSA1

Infineon Technologies

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

45 V

DUAL

R-PDSO-G4

1

COLLECTOR

AEC-Q101

BSP62E6327HTSA1

Infineon Technologies

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

80 V

DUAL

R-PDSO-G4

1

COLLECTOR

AEC-Q101

2SD2143TL

ROHM

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

80 MHz

10 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

10 W

1000

150 Cel

SILICON

70 V

TIN COPPER

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 0.0857

e2

10

260

BC879,112

NXP Semiconductors

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

200 MHz

.8 W

1 A

PLASTIC/EPOXY

SWITCHING

1.8 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

2000

150 Cel

SILICON

80 V

TIN

BOTTOM

O-PBCY-T3

Not Qualified

BUILT-IN BIAS RESISTOR

TO-92

e3

BSP61H6327XTSA1

Infineon Technologies

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

200 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

60 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

AEC-Q101

BSP50H6327XTSA1

Infineon Technologies

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

45 V

400 ns

1500 ns

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

BSP51H6327XTSA1

Infineon Technologies

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

60 V

400 ns

1500 ns

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

BSP52H6327XTSA1

Infineon Technologies

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

80 V

400 ns

1500 ns

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

BSP62H6327XTSA1

Infineon Technologies

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

200 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

2000

SILICON

80 V

400 ns

1500 ns

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

2SD1223(TE16L1,NQ)

Toshiba

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

1000

SILICON

80 V

SINGLE

R-PSSO-G2

COLLECTOR

ZXPD4000DH-7

Diodes Incorporated

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

.9 W

2 A

PLASTIC/EPOXY

AMPLIFIER

1.5 V

NO LEAD

SQUARE

1

8

SMALL OUTLINE

2000

150 Cel

SILICON

120 V

-55 Cel

NICKEL PALLADIUM GOLD

DUAL

S-PDSO-N8

1

e4

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395