SINGLE WITH BUILT-IN RESISTOR Small Signal Bipolar Junction Transistors (BJT) 422

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DTA123JUA-T106

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21

e1

DTC114GUAT106

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.2 W

30

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e1

10

260

NSVMMUN2113LT3G

Onsemi

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

.25 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

-55 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

BUILT IN BIAS RESISTANCE RATIO IS 1

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

DTA114TMT2L

ROHM

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

.15 W

100

150 Cel

SILICON

50 V

TIN COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e2

10

260

DTC123EMT2L

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

20

150 Cel

SILICON

50 V

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

10

260

DDTC113TLP-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-N3

1

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR, HIGH RELIABILITY

e4

30

260

PDTA114TEF,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT IN BIAS RESISTOR

e3

PDTA115EE,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.02 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

PDTA123EE,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

30

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

PDTA123JK,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.36

TO-236

e3

PDTA123TE,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

30

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

PDTA124TE,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e3

30

260

PDTA143EEF,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

PDTA143TE,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

200

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR

e3

30

260

PDTA143ZEF,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

e3

PDTA144TE,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e3

30

260

PDTA144VE,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

40

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 0.21

e3

30

260

PDTA144WE,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

60

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.47

e3

30

260

PDTC114TEF,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR

e3

PDTC114YEF,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e3

PDTC115EEF,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.02 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

80

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

PDTC123EE,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

30

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

PDTC123EEF,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

PDTC123YE,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

35

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 4.5

e3

30

260

PDTC123YK,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signals

35

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 4.5

TO-236

e3

PDTC124TE,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e3

30

260

PDTC143EEF,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

PDTC143TE,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signals

200

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e3

30

260

PDTC143XEF,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

50

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1

e3

PDTC143ZEF,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

e3

PDTC144TE,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e3

30

260

PDTC144WE,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

60

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.47

e3

30

260

DTC124EEBTL

ROHM

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.15 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

56

150 Cel

SILICON

50 V

TIN SILVER COPPER

DUAL

R-PDSO-F3

1

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 1

e1

10

260

PDTA114EK,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236

e3

PDTA114TS,126

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

150 Cel

SILICON

50 V

TIN

BOTTOM

O-PBCY-T3

NOT APPLICABLE

Not Qualified

BUILT-IN BIAS RESISTOR

TO-92

e3

NOT SPECIFIED

NOT SPECIFIED

PDTA124EK,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

60

SILICON

50 V

TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236

e3

PDTA124ES,126

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

56

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

TO-92

NOT SPECIFIED

NOT SPECIFIED

PDTA143EK,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236

e3

PDTA143XK,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

NOT APPLICABLE

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1

TO-236AB

e3

40

260

PDTA143ZK,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

.25 W

100

150 Cel

5 pF

SILICON

50 V

TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

TO-236

e3

PDTA144EEF,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

80

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

NOT SPECIFIED

NOT SPECIFIED

PDTA144EK,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

68

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236

e3

260

PDTA144EK,135

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

68

SILICON

50 V

TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236

e3

PDTA144ES,126

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

68

150 Cel

SILICON

50 V

TIN

BOTTOM

O-PBCY-T3

NOT APPLICABLE

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-92

e3

NOT SPECIFIED

NOT SPECIFIED

PDTC114EEF,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-F3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

NOT SPECIFIED

NOT SPECIFIED

PDTC114EK,135

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236

e3

PDTC114ES,126

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

30

150 Cel

SILICON

50 V

TIN

BOTTOM

O-PBCY-T3

NOT APPLICABLE

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-92

e3

NOT SPECIFIED

NOT SPECIFIED

PDTC115EE,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.02 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395