5 A Small Signal Bipolar Junction Transistors (BJT) 10

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

3STL2540

STMicroelectronics

PNP

SINGLE

YES

1.2 W

5 A

1

Other Transistors

100

150 Cel

NOT SPECIFIED

NOT SPECIFIED

2SB1386T100R

ROHM

PNP

SINGLE

YES

120 MHz

2 W

5 A

PLASTIC/EPOXY

SWITCHING

1 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

2 W

180

150 Cel

SILICON

20 V

Tin/Copper (Sn/Cu)

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e2

10

260

2STL1525

STMicroelectronics

NPN

SINGLE

NO

120 MHz

1 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

150 Cel

SILICON

25 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

DZT3150-13

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

2 W

5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

50

150 Cel

SILICON

25 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

DZT953-13

Diodes Incorporated

PNP

SINGLE

YES

125 MHz

3 W

5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

2DD2098R-13

Diodes Incorporated

NPN

SINGLE

YES

220 MHz

1 W

5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

180

150 Cel

SILICON

20 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

QSX2TR

ROHM

NPN

SINGLE

YES

200 MHz

.5 W

5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

30 V

TIN SILVER COPPER

DUAL

R-PDSO-G6

1

Not Qualified

e1

10

260

2SC5886A(T6L1,NQ)

Toshiba

NPN

SINGLE

YES

5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

200

SILICON

50 V

SINGLE

R-PSSO-G2

COLLECTOR

30

260

2SB1203T-E

Onsemi

PNP

SINGLE

NO

130 MHz

20 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

200

150 Cel

SILICON

50 V

TIN BISMUTH

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e6

2SC3303-Y(T6L1,NQ)

Toshiba

NPN

SINGLE

YES

120 MHz

20 W

5 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

1 W

120

150 Cel

SILICON

80 V

SINGLE

R-PSSO-G2

COLLECTOR

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395