.1 W Small Signal Bipolar Junction Transistors (BJT) 57

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

RN1314(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

50

SILICON

RN1101ACT(TPL3)

Toshiba

NPN

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

30

SILICON

RN1102ACT(TPL3)

Toshiba

NPN

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

50

SILICON

RN1103ACT(TPL3)

Toshiba

NPN

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

70

SILICON

RN1104ACT(TPL3)

Toshiba

NPN

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

80

SILICON

RN1105ACT(TPL3)

Toshiba

NPN

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

80

SILICON

RN1106ACT(TPL3)

Toshiba

NPN

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

80

SILICON

RN1112(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

RN1309(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

RN1303(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

RN1107ACT(TPL3)

Toshiba

NPN

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

80

SILICON

RN1108ACT(TPL3)

Toshiba

NPN

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

80

SILICON

RN1109ACT(TPL3)

Toshiba

NPN

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

70

SILICON

RN1112ACT(TPL3)

Toshiba

NPN

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

120

SILICON

RN1113ACT(TPL3)

Toshiba

NPN

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

120

SILICON

RN1704JE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN1708JE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN1709JE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

70

SILICON

30

260

RN1710JE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN1901FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

30

SILICON

RN1908FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN1909FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

70

SILICON

RN1961FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

30

SILICON

RN1963FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

70

SILICON

RN1965FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN1967FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN1970FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN1971FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN2107ACT(TPL3)

Toshiba

PNP

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

80

SILICON

RN2108ACT(TPL3)

Toshiba

PNP

YES

.1 W

.08 A

1

BIP General Purpose Small Signal

80

SILICON

RN1911FE(TE85L,F)

Toshiba

NPN

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN2114(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

50

SILICON

RN2117(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

RN2304(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

80

SILICON

RN2307(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

80

SILICON

RN2309(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

RN2313(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

RN2310(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

RN2311(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

RN2317(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

RN2704JE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2705JE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2706JE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2708JE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

RN2911FE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN2962FE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

50

SILICON

RN2971FE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

120

SILICON

RN2967FE(TE85L,F)

Toshiba

PNP

YES

.1 W

.1 A

2

BIP General Purpose Small Signal

80

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395