.25 W Small Signal Bipolar Junction Transistors (BJT) 81

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCR101T-E6327

Infineon Technologies

NPN

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR112F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

260

BCR142F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

BCR114F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

1

260

BCR139F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

1

260

BCR139T-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

BCR146F-E6327

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

50

SILICON

BCR153F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR149T-E6327

Infineon Technologies

NPN

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR162F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR151T-E6327

Infineon Technologies

PNP

YES

.25 W

.05 A

1

BIP General Purpose Small Signal

70

SILICON

BCR189F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

BCR189T-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

120

SILICON

BCR199T-E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

120

SILICON

BCR164T-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

BCR196F-E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

50

SILICON

BCR196T-E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

50

SILICON

BCR192F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

BCR103F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR103T-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR183F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

260

BCR198F-E6327

Infineon Technologies

PNP

YES

.25 W

.07 A

1

BIP General Purpose Small Signal

70

SILICON

1

260

BCR133F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

1

260

BCR185F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

70

SILICON

BCR135F-E6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

70

SILICON

BCR169F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

120

SILICON

BCR191F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

50

BCR158F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

70

SILICON

BCR179F-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signals

120

SILICON

PDTA143ZK,135

NXP Semiconductors

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

80

BCR183TE6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

1

260

DDTC113TLP-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.25 W

.1 A

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-N3

1

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR, HIGH RELIABILITY

e4

30

260

PDTC123YK,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signals

35

SILICON

50 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 4.5

TO-236

e3

BCR114TE6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

30

SILICON

BCR112TE6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR192TE6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

260

BCR162TE6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

BCR142TE6327

Infineon Technologies

NPN

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

BCR153TE6327

Infineon Technologies

PNP

YES

.25 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

1

260

BC847BLP4-7

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

Other Transistors

200

150 Cel

SILICON

45 V

NICKEL PALLADIUM GOLD

BOTTOM

R-PBCC-N3

1

COLLECTOR

Not Qualified

e4

30

260

2DA1774QLP-7

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

.25 W

.1 A

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

Other Transistors

120

150 Cel

SILICON

40 V

Nickel/Palladium/Gold (Ni/Pd/Au)

BOTTOM

R-PBCC-N3

1

COLLECTOR

Not Qualified

HIGH RELIABILITY

e4

30

260

PDTB123EK,115

NXP Semiconductors

PNP

YES

.25 W

.5 A

1

BIP General Purpose Small Signal

40

SILICON

PDTB123TK,115

NXP Semiconductors

PNP

YES

.25 W

.5 A

1

BIP General Purpose Small Signal

100

SILICON

PDTD113EK,115

NXP Semiconductors

NPN

YES

.25 W

.5 A

1

BIP General Purpose Small Signal

33

SILICON

2PB710AS,115

NXP Semiconductors

PNP

SINGLE

YES

140 MHz

.25 W

.5 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

15 pF

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

TO-236

e3

260

PDTA144EK,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

68

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236

e3

260

PDTC124EK,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

60

SILICON

50 V

TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-236

e3

PDTC143XK,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signals

50

SILICON

50 V

TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1

TO-236

e3

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395