.6 W Small Signal Bipolar Junction Transistors (BJT) 15

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SC2909S-AA

Onsemi

NPN

SINGLE

NO

150 MHz

.6 W

.07 A

PLASTIC/EPOXY

SWITCHING

.3 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

.6 W

140

150 Cel

2 pF

SILICON

160 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

BOTTOM

O-PBCY-T3

NTE159

Nte Electronics

PNP

SINGLE

NO

100 MHz

.6 W

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

30

SILICON

80 V

100 ns

400 ns

BOTTOM

O-PBCY-W3

Not Qualified

LOW NOISE

TO-92

NOT SPECIFIED

NOT SPECIFIED

PN4249D74Z

Fairchild Semiconductor

PNP

SINGLE

NO

.6 W

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

150 Cel

SILICON

60 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

PMEM4010ND,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN DIODE

YES

150 MHz

.6 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

200

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-G6

Not Qualified

e3

PMEM4010PD,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN DIODE

YES

150 MHz

.6 W

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

160

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-G6

Not Qualified

e3

PMEM4020AND,115

NXP Semiconductors

NPN

SINGLE WITH BUILT-IN DIODE

YES

150 MHz

.6 W

.95 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

200

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-G6

1

Not Qualified

e3

DPLS320A-7

Diodes Incorporated

PNP

SINGLE

YES

215 MHz

.6 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

20 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

DNLS320A-7

Diodes Incorporated

NPN

SINGLE

YES

220 MHz

.6 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

20 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

NSVDTC144TM3T5G

Onsemi

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.6 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

120

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-F3

1

BUILT-IN BIAS RESISTOR

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

2N4401-AP

Micro Commercial Components

NPN

SINGLE

NO

250 MHz

.6 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

SILICON

40 V

35 ns

255 ns

Matte Tin (Sn)

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

e3

10

260

DTC144WM3T5G

Onsemi

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.6 W

.1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

Matte Tin (Sn) - annealed

DUAL

R-PDSO-F3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.1

e3

40

260

PMEM4020APD,115

NXP Semiconductors

PNP

SINGLE WITH BUILT-IN DIODE

YES

150 MHz

.6 W

1.3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

50

SILICON

40 V

Matte Tin (Sn)

DUAL

R-PDSO-G6

Not Qualified

e3

DSS4140V-7

Diodes Incorporated

NPN

SINGLE

YES

150 MHz

.6 W

1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

75

150 Cel

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

DSS4220V-7

Diodes Incorporated

NPN

SINGLE

YES

260 MHz

.6 W

2 A

PLASTIC/EPOXY

.35 V

FLAT

RECTANGULAR

1

6

SMALL OUTLINE

.6 W

120

150 Cel

SILICON

20 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

DSS5140V-7

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

.6 W

1 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

6

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395