3 W Small Signal Bipolar Junction Transistors (BJT) 12

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCX6810E6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

100 MHz

3 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

1

COLLECTOR

BCX6816E6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

100 MHz

3 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

1

COLLECTOR

BCX6825E6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

100 MHz

3 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

20 V

SINGLE

R-PSSO-F3

1

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

BCX6825H6327XTSA1

Infineon Technologies

NPN

SINGLE

YES

100 MHz

3 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

160

150 Cel

SILICON

20 V

Tin (Sn)

SINGLE

R-PSSO-F3

1

COLLECTOR

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

MMJT9410T1G

Onsemi

NPN

SINGLE

YES

72 MHz

3 W

.01 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

60

150 Cel

SILICON

30 V

TIN

DUAL

R-PDSO-G3

3

COLLECTOR

Not Qualified

e3

30

260

DZT853-13

Diodes Incorporated

NPN

SINGLE

YES

130 MHz

3 W

6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

DZT851-13

Diodes Incorporated

NPN

SINGLE

YES

130 MHz

3 W

6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

DZT953-13

Diodes Incorporated

PNP

SINGLE

YES

125 MHz

3 W

5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

MMJT9410T1

Onsemi

NPN

SINGLE

YES

72 MHz

3 W

.01 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

60

150 Cel

SILICON

30 V

TIN LEAD

DUAL

R-PDSO-G3

3

COLLECTOR

Not Qualified

e0

30

235

MMJT9435T1G

Onsemi

PNP

SINGLE

YES

110 MHz

3 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

30 V

TIN

DUAL

R-PDSO-G4

3

COLLECTOR

Not Qualified

TO-261AA

e3

30

260

MMJT9435T3G

Onsemi

PNP

SINGLE

YES

110 MHz

3 W

3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

30 V

TIN

DUAL

R-PDSO-G4

3

COLLECTOR

Not Qualified

TO-261AA

e3

30

260

2N1711PBFREE

Central Semiconductor

NPN

SINGLE

NO

70 MHz

3 W

.5 A

METAL

SWITCHING

1.5 V

WIRE

ROUND

1

3

CYLINDRICAL

.8 W

40

200 Cel

25 pF

SILICON

-65 Cel

MATTE TIN OVER NICKEL

BOTTOM

O-MBCY-W3

TO-39

e3

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395