130 MHz Small Signal Bipolar Junction Transistors (BJT) 22

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCR133WE6327HTSA1

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e3

40

260

BCR141E6433HTMA1

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

2SB1216S-E

Onsemi

PNP

SINGLE

NO

130 MHz

20 W

4 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

140

150 Cel

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e6

2SB1216S-H

Onsemi

PNP

SINGLE

NO

130 MHz

20 W

4 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

140

150 Cel

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e6

2SB1216T-E

Onsemi

PNP

SINGLE

NO

130 MHz

20 W

4 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

200

150 Cel

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e6

2SB1216T-TL-E

Onsemi

PNP

SINGLE

YES

130 MHz

20 W

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e6

DZT853-13

Diodes Incorporated

NPN

SINGLE

YES

130 MHz

3 W

6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

20

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

DZT851-13

Diodes Incorporated

NPN

SINGLE

YES

130 MHz

3 W

6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

BC639,126

NXP Semiconductors

NPN

SINGLE

NO

130 MHz

.8 W

1 A

PLASTIC/EPOXY

.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

150 Cel

SILICON

80 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

BCX56-10R1

Onsemi

NPN

SINGLE

YES

130 MHz

1.56 W

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSSO-F3

1

Not Qualified

e0

2N6427G

Onsemi

NPN

DARLINGTON

NO

130 MHz

.625 W

.5 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

14000

150 Cel

SILICON

40 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

2STX1360

STMicroelectronics

NPN

SINGLE

NO

130 MHz

1 W

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

160

150 Cel

SILICON

60 V

120 ns

785 ns

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

ZDT694QTA

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

130 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2

8

SMALL OUTLINE

150

SILICON

120 V

MATTE TIN

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

PBSS304NXZ

Nexperia

NPN

SINGLE

YES

130 MHz

2.1 W

4.7 A

PLASTIC/EPOXY

SWITCHING

.245 V

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

75

150 Cel

70 pF

SILICON

60 V

-65 Cel

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

BCR133SH6433XTMA1

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 1

AEC-Q101

BCR22PNH6433XTMA1

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

50

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTANCE RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

BCR10PNH6727XTSA1

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

BCR10PNH6730XTMA1

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

BCR133B6327

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

1

BUILT-IN BIAS RESISTOR RATIO IS 1

260

BCR133SE6327BTSA1

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

130 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

50 V

DUAL

R-PDSO-G6

ISOLATED

BUILT-IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

BCR22PNE6433HTMA1

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

130 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

50

150 Cel

3 pF

SILICON

50 V

DUAL

R-PDSO-G6

BUILT IN BIAS RESISTANCE RATIO IS 1

AEC-Q101

2SB1203T-E

Onsemi

PNP

SINGLE

NO

130 MHz

20 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

200

150 Cel

SILICON

50 V

TIN BISMUTH

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e6

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395