170 MHz Small Signal Bipolar Junction Transistors (BJT) 25

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BCV27E6327HTSA1

Infineon Technologies

NPN

DARLINGTON

YES

170 MHz

.36 W

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

4000

150 Cel

SILICON

30 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BCV47E6433HTMA1

Infineon Technologies

NPN

DARLINGTON

YES

170 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

2000

SILICON

60 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BC817K25E6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

e3

AEC-Q101

BC818K16WH6327XTSA1

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

25 V

TIN

DUAL

R-PDSO-G3

1

e3

AEC-Q101

BC818K40E6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

25 V

TIN

DUAL

R-PDSO-G3

1

e3

AEC-Q101

BCW66KGE6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.8 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

45 V

TIN

DUAL

R-PDSO-G3

1

e3

AEC-Q101

BC368,112

NXP Semiconductors

NPN

SINGLE

NO

170 MHz

.83 W

1 A

PLASTIC/EPOXY

SWITCHING

.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

85

150 Cel

40 pF

SILICON

20 V

TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

2DD2661-13

Diodes Incorporated

NPN

SINGLE

YES

170 MHz

2 W

2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

12 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

2DD2678-13

Diodes Incorporated

NPN

SINGLE

YES

170 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

12 V

MATTE TIN

DUAL

R-PDSO-F4

1

COLLECTOR

Not Qualified

e3

30

260

MPS4124G

Onsemi

NPN

SINGLE

NO

170 MHz

.625 W

.2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

60

150 Cel

SILICON

25 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

BCP68-25/ZLF

Nexperia

NPN

SINGLE

YES

170 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

160

SILICON

20 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP68-25/ZLX

Nexperia

NPN

SINGLE

YES

170 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

160

SILICON

20 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP68/ZLF

Nexperia

NPN

SINGLE

YES

170 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

20 V

DUAL

R-PDSO-G4

COLLECTOR

AEC-Q101; IEC-60134

BCP68/ZLX

Nexperia

NPN

SINGLE

YES

170 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

20 V

DUAL

R-PDSO-G4

COLLECTOR

AEC-Q101; IEC-60134

BCP68F

Nexperia

NPN

SINGLE

YES

170 MHz

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

SILICON

20 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC817K25WE6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

SILICON

45 V

DUAL

R-PDSO-G3

AEC-Q101

BC817K40WE6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

45 V

DUAL

R-PDSO-G3

AEC-Q101

BCR108SH6433XTMA1

Infineon Technologies

NPN

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

170 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 21.36

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

BC817K16E6433HTMA1

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

45 V

DUAL

R-PDSO-G3

AEC-Q101

BCR108WH6433

Infineon Technologies

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

170 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

70

SILICON

50 V

DUAL

R-PDSO-G3

BUILT-IN BIAS RESISTOR RATIO IS 21.36

AEC-Q101

BC817K-25WH6433

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

BCW66KG-E6433

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.5 W

.8 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

BCW66KHB6327HTLA1

Infineon Technologies

NPN

SINGLE

YES

170 MHz

.8 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

150 Cel

SILICON

45 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

BCR08PNE6327BTSA1

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

170 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

150 Cel

2 pF

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 21.36

AEC-Q101

BCR08PNE6433HTMA1

Infineon Technologies

NPN AND PNP

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

YES

170 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

70

150 Cel

2 pF

SILICON

50 V

DUAL

R-PDSO-G6

BUILT-IN BIAS RESISTOR RATIO IS 21.36

AEC-Q101

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395