40 MHz Small Signal Bipolar Junction Transistors (BJT) 14

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N5087BU

Fairchild Semiconductor

PNP

SINGLE

NO

40 MHz

.35 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

250

150 Cel

SILICON

50 V

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e3

2N5087G

Onsemi

PNP

SINGLE

NO

40 MHz

1.5 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

250

150 Cel

SILICON

50 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

2N6520RLRAG

Onsemi

PNP

SINGLE

NO

40 MHz

1.5 W

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

150 Cel

SILICON

350 V

200 ns

3500 ns

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

MMBT6517LT1G

Onsemi

NPN

SINGLE

YES

40 MHz

.225 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

350 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

MMBT6517LT3G

Onsemi

NPN

SINGLE

YES

40 MHz

.225 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

350 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

2N5087RLRAG

Onsemi

PNP

SINGLE

NO

40 MHz

.35 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

250

150 Cel

SILICON

50 V

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e1

260

2N6515RLRMG

Onsemi

NPN

SINGLE

NO

40 MHz

.625 W

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

25

150 Cel

SILICON

250 V

200 ns

3500 ns

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

2N6517G

Onsemi

NPN

SINGLE

NO

40 MHz

.625 W

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

150 Cel

SILICON

350 V

200 ns

3500 ns

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

2N6517RLRAG

Onsemi

NPN

SINGLE

NO

40 MHz

.625 W

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

150 Cel

SILICON

350 V

200 ns

3500 ns

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

2N6517RLRPG

Onsemi

NPN

SINGLE

NO

40 MHz

.625 W

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

15

150 Cel

SILICON

350 V

200 ns

3500 ns

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

MMBT6520LT3G

Onsemi

PNP

SINGLE

YES

40 MHz

.225 W

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

350 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

FMMT416TA

Diodes Incorporated

NPN

SINGLE

YES

40 MHz

.5 W

.5 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

8 pF

SILICON

100 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

e3

260

NSVMMBT6517LT1G

Onsemi

NPN

SINGLE

YES

40 MHz

.3 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

350 V

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101

FMMT411TD

Diodes Incorporated

NPN

SINGLE

YES

40 MHz

.8 W

.9 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

15 pF

SILICON

15 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

e3

260

MIL-STD-202

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395