70 MHz Small Signal Bipolar Junction Transistors (BJT) 9

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PZTA42E6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

70 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

40

150 Cel

SILICON

300 V

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

BFN18E6327HTSA1

Infineon Technologies

NPN

SINGLE

YES

70 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

300 V

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB1184TLQ

ROHM

PNP

SINGLE

YES

70 MHz

15 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

120

150 Cel

SILICON

50 V

Tin/Copper (Sn98Cu2)

SINGLE

R-PSSO-G2

1

Not Qualified

e2

10

260

2PB709AR,115

NXP Semiconductors

PNP

SINGLE

YES

70 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

210

150 Cel

5 pF

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

TO-236

e3

260

BSP19AT1G

Onsemi

NPN

SINGLE

YES

70 MHz

1.5 W

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

350 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

TO-261AA

e3

30

260

MMBTA42LT1HTSA1

Infineon Technologies

NPN

SINGLE

YES

70 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

300 V

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

2N1711PBFREE

Central Semiconductor

NPN

SINGLE

NO

70 MHz

3 W

.5 A

METAL

SWITCHING

1.5 V

WIRE

ROUND

1

3

CYLINDRICAL

.8 W

40

200 Cel

25 pF

SILICON

-65 Cel

MATTE TIN OVER NICKEL

BOTTOM

O-MBCY-W3

TO-39

e3

BFN18H6327XTSA1

Infineon Technologies

NPN

SINGLE

YES

70 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

300 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

e3

BFN26E6433HTMA1

Infineon Technologies

NPN

SINGLE

YES

70 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

300 V

DUAL

R-PDSO-G3

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395