YES Small Signal Bipolar Junction Transistors (BJT) 1,507

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DMMT3904W-7

Diodes Incorporated

NPN

SEPARATE, 2 ELEMENTS

YES

300 MHz

.2 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

40 V

70 ns

250 ns

TIN LEAD

DUAL

R-PDSO-G6

Not Qualified

e0

DMMT3906W-7

Diodes Incorporated

PNP

SEPARATE, 2 ELEMENTS

YES

250 MHz

.2 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

SILICON

40 V

70 ns

300 ns

TIN LEAD

DUAL

R-PDSO-G6

Not Qualified

e0

DDTC123EUA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

20

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

DDTC143EUA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

20

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

DDTC144EUA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

68

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

DDTA113ZCA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

33

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

e0

DDTA113ZUA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

33

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 10

e0

DDTA114GCA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR

e0

DDTA114TCA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR

e0

DDTA114TUA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e0

DDTA114WCA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

24

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.47

e0

DDTA114YCA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.07 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

68

SILICON

50 V

Tin/Lead (Sn85Pb15)

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e0

10

235

DDTA114YUA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.07 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

68

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e0

DDTA123JCA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.36

e0

DDTA123TUA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e0

DDTA123YUA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

33

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.54

e0

DDTA124TCA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR

e0

DDTA143XCA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.12

e0

DDTA144VUA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.03 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

33

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.21

e0

DDTA144WCA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.03 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

56

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.46

e0

DDTC113TCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e0

DDTC113ZCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

33

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTANCE RATIO IS 10

e0

DDTC114ECA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.05 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

DDTC114GCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e0

DDTC114TCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e0

DDTC114WCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

24

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTANCE RATIO IS 0.47

e0

DDTC114YCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.07 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

68

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTANCE RATIO IS 4.7

e0

DDTC115ECA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.02 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

82

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

DDTC123ECA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

DDTC123JCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTANCE RATIO IS 21.36

e0

DDTC123YCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

33

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTANCE RATIO IS 4.55

e0

DDTC124ECA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.03 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

56

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

DDTC124XCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.05 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

68

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTANCE RATIO IS 2.14

e0

DDTC143ECA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

DDTC143TCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e0

DDTC143XCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTANCE RATIO IS 2.13

e0

DDTC143ZCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTANCE RATIO IS 10

e0

DDTC144ECA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

68

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

DDTC144TCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e0

DDTC144VCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.03 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

33

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTANCE RATIO IS 0.21

e0

DDTC144WCA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.03 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

56

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTANCE RATIO IS 0.47

e0

BC817-16-7

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

.31 W

.8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

60

150 Cel

SILICON

45 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

BC817-25-7

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

.31 W

.8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

45 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

BC817-40-7

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

.31 W

.8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

170

150 Cel

SILICON

45 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

DDTC114TUA-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR

e0

DDTC115TE-7

Diodes Incorporated

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR

e0

ZXTD6717E6QTA

Diodes Incorporated

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

180 MHz

1.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

30

150 Cel

SILICON

15 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DDTA115EUA-7

Diodes Incorporated

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

250 MHz

.02 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

82

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

1

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e0

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395